Abstract:A novel approach is developed by incorporating buried selenium seed layers to enhance the performance of Sb2Se3 solar cells through improved heterojunction quality and reduced defect density. This method significantly boosts both VOC and PCE, reaching 498.3 mV and 8.42%, respectively, marking the highest efficiency reported for Sb2Se3 solar cells prepared via VTD. Quasi‐1D antimony selenide (Sb2Se3) is known for its stable phase structure and excellent light absorption coefficient, making it a promising material for high‐efficiency light harvesting. However, the (Sb4Se6)n ribbons align horizontally, increasing defect interference and limiting vertical carrier transport. Herein, a novel strategy of burying selenium (Se) seed layers to reduce lattice mismatch at the heterojunction interface, promote crystal orientation, mitigate deep donor defects, increase P‐type carrier concentration, and purify the PN junction, is proposed. Admittance spectroscopy reveals that Sb2Se3 solar cells with Se seed layers have higher activation energies for defect states and significantly lower defect densities (1.2 × 1014, 2.7 × 1014, and 1.3 × 1015 cm−3 for D1, D2, and D3) compared to an order of magnitude higher densities in Sb2Se3 solar cells without a Se seed layer. First‐principles calculations support these findings, showing that Se seed layers create a Se‐rich environment, reducing selenium vacancies (VSe), antimony on selenium sites (SbSe), and interface defects. This dual passivation mechanism suppresses defect formation and activation, increasing carrier concentration and open‐circuit voltage (VOC). Ultimately, employing this novel method, a VOC of 498.3 mV and an efficiency of 8.42%, the highest performance reported for Sb2Se3 solar cells prepared via vapor transport deposition (VTD), are achieved.

Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium

Intrinsic point defect tolerance in selenium for indoor and tandem photovoltaics

Complicated and Unconventional Defect Properties of the Quasi-One-Dimensional Photovoltaic Semiconductor Sb2Se3.

Defect Physics of the Quasi-Two-dimensional Photovoltaic Semiconductor GeSe

Selenium and the role of defects for photovoltaic applications

An Antibonding Valence Band Maximum Enables Defect-Tolerant and Stable GeSe Photovoltaics

Vacancy-induced Giant Photogalvanic Effect in TiSe2 Heterojunctions

Deep defects limiting the conversion efficiency in Sb2Se3 thin-film solar cells

Dimension-dependent intrinsic point defect characteristic of binary photovoltaic materials

Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics

Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe

More Se Vacancies in Sb2 Se3 under Se-Rich Conditions: an Abnormal Behavior Induced by Defect-Correlation in Compensated Compound Semiconductors.

More Se Vacancies in Sb 2 Se 3 under Se‐Rich Conditions: An Abnormal Behavior Induced by Defect‐Correlation in Compensated Compound Semiconductors

First-principles assessment of defect-assisted nonradiative recombination with multiple charge-state transitions in GeSe

Mechanism of Defect Passivation in Sb2Se3 Solar Cells via Buried Selenium Seed Layer

Enhanced Sb2Se3 Solar Cell Performance Through Theory-Guided Defect Control

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Defects controlled hole doping and multivalley transport in SnSe single crystals