Deep defects limiting the conversion efficiency in Sb2Se3 thin-film solar cells

Shangwei Dong,Guoshuai Li,Ruijuan Qi,Shuai Yang,Pingxiong Yang,Lin Sun,Fangyu Yue,Jing Hong

DOI: https://doi.org/10.1039/d2cp05585f

IF: 3.3

2023-01-13

Physical Chemistry Chemical Physics

Abstract:Quasi-one-dimensional (Q1D) semiconductor antimony selenide (Sb2Se3) shows great potential in the photovoltaic field, but the reported photoelectric conversion efficiency (PCE) of Sb2Se3-based solar cells still presents no breakthrough during the past several years, of which the intrinsic reasons lack of detailed experimental investigations. Here, we prepared the high-quality Q1D Sb2Se3 thin films by optimizing the VTD growth conditions. By investigating the bandedge electronic level structure and carrier relaxation/recombination dynamics via steady-state/transient optical spectroscopic techniques, we found that although the Se-rich growth condition can highly improve the crystal quality of the Q1D Sb2Se3 thin films with a carrier lifetime of ~8.3 μs, at least one order of magnitude longer than earlier reports, the not-so-deep defect states related to selenium vacancies still predominate locating at ~0.3 eV (300 K) below the conduction band in a relatively high density, which significantly influence the transport and separation of photo-generated non-equilibrium carriers with an ultrafast capture rate of carriers and result in the intrinsic limitation of the PCE value below a high record value of ~7.63%. This work suggests that how to effectively eliminate this kind of deep donors becomes a practical issue for high-performance Sb2Se3-based film solar cells.

chemistry, physical,physics, atomic, molecular & chemical