Abstract:Although the silicon heterojunction (SHJ) solar cell is the crystalline silicon solar cell with highest conversion efficiency at present, its higher cost of production line has been a factor restricting its industrial development. The use of hot wire chemical vapor deposition (HWCVD) technology instead of the mainstream plasma enhanced chemical vapor deposition (PECVD) technology for the deposition of amorphous silicon films can effectively reduce the cost of equipment and processing, and has a bright future. In recent years, i-a-Si:H films grown by PECVD have obtained great improvement in passivation quality, whereas HWCVD technology has been neglected in this field. This has significantly limited the development and application of HWCVD technology in SHJ cell production. In this work, we exploited the differences in the films properties and microstructures deposited by various hot-wire temperatures and successfully developed a structure for the high-passivation-quality i-a-Si:H film grown by HWCVD, consisting of a buffer layer and a double-layer bulk stack. By introducing the buffer layer grown with the 1650 degrees C hot-wire temperature and pure silane, the effective minority carrier lifetime was improved from 2.3 ms to 7.5 ms, and a cell efficiency enhancement of 0.4%abs was obtained. By depositing the bulk layer sequentially with hot-wire temperatures of 1800 degrees C and 1900 degrees C, the passivation quality and the conductance were both improved. An effective minority carrier lifetime of 8 ms and a further cell efficiency enhancement of 0.15%abs were obtained. Finally, SHJ solar cell efficiency of 24.35% was obtained with a home-made HWCVD-based pilot SHJ cell line.

Structural Optimization and Growth of Intrinsic Hydrogenated Amorphous Silicon Films by HWCVD

Improved Amorphous/Crystalline Silicon Interface Passivation for Heterojunction Solar Cells by Low-Temperature Chemical Vapor Deposition and Post-Annealing Treatment

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Structural Evolution Optimization at P/i Interface and in the Bulk Intrinsic‐layer for High Efficiency Microcrystalline Silicon Solar Cells

A-Siox:H Passivation Layers for Cz-Si Wafer Deposited by Hot Wire Chemical Vapor Deposition

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD

Crystal Silicon Heterojunction Solar Cells by Hot-Wire CVD

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Improving the performance of high-efficiency silicon heterojunction solar cells through low-temperature deposition of an i-a-Si:H anti-epitaxial buffer layer

25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers

Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells

Optimization of High Rate Growth High Quality Μc-Si:H Thin Films and Its Application to the Solar Cells

Hydrogenated Microcrystalline Silicon Films Prepared by VHF-PECVD and Single Junction Solar Cell

Optimized N-Type Amorphous Silicon Window Layers Via Hydrogen Dilution For Silicon Heterojunction Solar Cells By Catalytic Chemical Vapor Deposition

Improvement of Hydrogenated Microcrystalline Silicon Solar Cell Performance by Vhf Power Profiling Technique

Fabrication of High Growth Rate Solar-Cell-quality C-Si:H Thin Films by VHF-PECVD

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Microstructure And Lateral Conductivity Control Of Hydrogenated Nanocrystalline Silicon Oxide And Its Application In A-Si:H/A-Sige:H Tandem Solar Cells