Abstract:The diode effect is fundamental to electronic devices and is widely used in rectifiers and a.c.–d.c. converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE) 1,2,3,4,5,6,7,8 , which relies on broken inversion symmetry in a superconductor, may mitigate this obstacle: in one direction, a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE in Nb/V/Ta superlattices with a polar structure 1,2 , in superconducting devices with asymmetric patterning of pinning centres 9 or in superconductor/ferromagnet hybrid devices with induced vortices 10,11 . The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe 2 /Nb 3 Br 8 /NbSe 2 junction; it originates from asymmetric Josephson tunnelling that is induced by the Nb 3 Br 8 barrier and the associated NbSe 2 /Nb 3 Br 8 interfaces 12 . Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta] 20 multilayers. The magnetic layers provide the necessary symmetry breaking, and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures 13,14,15,16,17,18 , such as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions 19,20,21,22 . Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption.

NbS2 Monolayers As Bipolar Magnetic Semiconductors for Multifunctional Spin Diodes and 3 Nm Cold-Source Spin Field-Effect Transistors

NbS 2 Monolayers as Bipolar Magnetic Semiconductors for Multifunctional Spin Diodes and 3 nm Cold-Source Spin Field-Effect Transistors

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Three-Dimensional Cold Metals in Realizing Steep-Slope Transistors Based on Monolayer MoS2

Gate-controlled Spin Filter, Spin Valve, and Negative Differential Resistance in Cold Metal/bipolar Magnetic Semiconductor Lateral Homologous Heterojunctions

Designing High-Performance Nanoscale Spin-MOSFET Devices by Using Two-Dimensional Half-Metallic Cr2Se3

Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers

Multifunctional spintronic transistors: Sub-60 mV/dec switching, non-local GMR, and NDR in spin gapless semiconductor and/or spin gapped metal FETs

B4CN3and B3CN4monolayers As the Promising Candidates for Metal-Free Spintronic Materials

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Promising Properties of a Sub-5-nm Monolayer MoSi<sub>2</sub>N<sub>4</sub> Transistor

Cold Source Diodes with Sub-Unity Ideality Factor and Giant Negative Differential Resistance

Ni(NCS) 2 monolayer: a robust bipolar magnetic semiconductor

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Spin transport characteristics and photoelectric properties of magnetic semiconductor NiBr2 monolayer

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

Designing High-Performance Nanoscale Spin-MOSFET Devices by Using Two-Dimensional Half-Metallic Cr 2 Se 3

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor