Light-Absorber Engineering Induced Defect Passivation for Efficient Antimony Triselenide Solar Cells

Chunyan Duan,Yandi Luo,Changji Hu,Wenyong Hu,Muhammad Ishaq,Shuo Chen,Zhenghua Su,JianLiang Li,Rong Tang,Jun Zhao,Guangxing Liang
DOI: https://doi.org/10.1016/j.jallcom.2024.175130
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:Antimony selenide (Sb2Se3) has attracted considerable attention thanks to non-toxic, earth-abundant and exceptional optoelectrical properties. Post-selenization treatment is a widely used approach to improve crystallization and passivate defects for chalcogenide thin-film solar cells. The overall performance of the final device is often significantly affected by the process conditions. Herein, we have systematically explored the influence of selenization pressure on Sb2Se3 thin-film solar cells fabricated via sputtering and post-selenization. High-quality Sb2Se3 thin films without visible voids and blisters have been obtained at an optimized selenization pressure of 0.05Pa. The optimized Sb2Se3 absorber thin film not only mitigates charge carrier recombination but optimizes the back contact of the device. Consequently, a remarkable efficiency of 7.42% was obtained for the champion device, paving a simple and effective way to fabricate superior Sb2Se3 absorber thin films and highly efficient solar cells. This study is expected to give insights into post-selenization operating conditions for device efficiency enhancement and to further expand the commercial application of Sb2Se3 thin-film solar cells.
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