Abstract:Silicon-based static random access memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying von-Neumann computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-the-art computing systems, to a large extent, result from the well-known von-Neumann bottleneck. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications such as artificial intelligence, machine learning, and cryptography. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable in-memory Boolean computations. In this paper, we present an augmented version of the conventional SRAM bit-cells, called the X-SRAM, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations, including NAND, NOR, IMP (implication), XOR logic gates, with respect to different bit-cell topologies − the 8T cell and the 8+T Differential cell. In addition, we also present a novel ‘read-compute-store’ scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using the predictive transistor models and detailed Monte-Carlo variation analysis. As an illustration, we also present the efficacy of the proposed in-memory computations by implementing advanced encryption standard algorithm on a non-standard von-Neumann machine wherein the conventional SRAM is replaced by X-SRAM. Our simulations indicated that up to 75% of memory accesses can be saved using the proposed techniques.

A 9T-SRAM Based Computing-in-memory with Redundant Unit and Digital Operation for Boolean Logic and MAC

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

Nonlinear Quantization for In-Sram Multi-Bit MAC Design

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

C 2 IM: A Compact Computing-In-Memory Unit of 10 Transistors with Standard 6T SRAM

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 28-Nm Compute SRAM with Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing

Configurable in-memory computing architecture based on dual-port SRAM

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

A 10T SRAM with Two Read and Write Modes Across Row and Column for CAM Operation and Computing In-Memory

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

A 6T-SRAM-Based Computing-In-Memory Architecture using 22nm FD-SOI Device

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

A Reconfigurable SRAM Computing-in-Memory Macro Supporting Ping-Pong Operation and CIM Pipeline for Multi-mode MAC Operations

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

An 11T SRAM Cell for the Dual-Direction In-Array Logic/CAM Operations

A Computing-in-Memory SRAM Macro Based on Fully-Capacitive-Coupling With Hierarchical Capacity Attenuator for 4-b MAC Operation

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.