Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

Device Scaling Considerations for Sub-90-nm 2-Bit/cell Split-Gate Flash Memory Cell

Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Fabrication Process Improvement of Aggressively Scaled Dual-Bit/Cell Split-Gate Floating-Gate Flash Cell

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Fabrication and Characterization of A Novel Fully Self-Aligned Split-Gate Sonos Memory Device

A Highly Scalable Opposite Side Floating-Gate Flash Memory Cell

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

Dual Floating Gate Flash Cell Using Single Poly Processes

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

Investigation of a New Disturb Effect in the Aggressively Scaled Dual-Bit/Cell Split-Gate Floating-Gate Flash Cell

Improvement of Cell’s Performance for Low Power Self-Aligned Split-Gate SONOS Memory Device

An opposite side floating gate FLASH memory scalable to 20 nm length

A Novel Vertical Channel Self-Aligned Split-Gate Flash Memory

Opposite side floating gate SOI FLASH memory cell

Functionality Demonstration Of A High-Density 1.1v Self-Aligned Split-Gate Nvm Cell Embedded Into Lp 40 Nm Cmos For Automotive And Smart Card Applications

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Design of Reading Circuit for High-Reliability 55-Nm Split-Gate SuperFlash Technology