Abstract:ZnO has recently become a very popular material due to its great potential for optoelectronics applications. The large direct band gap of 3.3 eV, along with the large exciton binding energy (60 meV) and many other advantages, make ZnO a strong candidate for the next generation of ultraviolet light emitting and lasing devices operating at high temperatures and in harsh environments. The ZnO based light emitting diode (LEDs) will be brighter than the current state-of-art nitride light emitters, and at the same time, the production cost will be reduced significantly compared with current technology. The pulsed laser deposition (PLD) technique has been proved to be a very effective method to deposit high-quality films with complex composition. This technique has some other advantages such as deposition in controllable oxygen partial pressure, high controllability of film composition and growth process, and relatively high deposition rates. In this paper, the ZnO films were deposited on single-crystalline Si(100) substrates by pulsed laser deposition (PLD) method. X-ray diffraction (XRD),atom force microscope (AFM),transmission electron microscope (TEM)and photoluminescence (PL) spectrum measurements were employed for the investigation of crystal quality and light emitting performance. The dependence of crystal quality and photoluminescence performance on the growth temperature and oxygen partial pressure was investigated. The results indicate that high-quality ZnO thin films with perfect c-axis preferred orientation and smooth and dense microstructure have been successfully grown under optimized conditions (700 ℃, 20 Pa). The near-band-edge emissions in PL spectra are greatly enhanced and the deep level emissions are weakened with the increase of oxygen pressure due to the improvement of stoichiometry, the ZnO films grown under high O_2 pressure (20 Pa) are well close to stoichiometry and of optically high quality. Therefore, it can be concluded that the PL spectra depend on the stoichiometry and the microstructure of the film. The achievement reported here will be used to control the optical properties of ZnO thin films for optical device applications.

Microstructure and Photoluminescence Properties of ZnO Thin Films Grown by PLD on Si(111) Substrates

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Microstructure and Photoluminescence Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition

ZnO Thin Films on Si(1 1 1) Grown by Pulsed Laser Deposition from Metallic Zn Target

Study on Growth and Optical Properties of ZnO Thin Films on Si(111) Substrate by Plasma Assisted Molecular Beam Epitaxy (P-MBE)

Effect of Oxygen Pressure on the Structural and Optical Properties of ZnO Thin Films on Si (111) by PLD

Effect of substrate temperature on structure and photoluminescence properties of ZnO thin films

Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)

Zno Thin Film Formation on Si(111) by Laser Ablation of Zn Target in Oxygen Atmosphere

Structural and optical properties of ZnO films deposited on MgO(100) substrates by PLD

Structure and Photoluminescence of Nano-Zno Films Grown on A Si (100) Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Research of characteristic temperature of fabricating ZnO films on Si(111) substrates by PLD

Temperature dependent photoluminescence of epitaxial ZnO films on Si (111) substrates

The photoluminescence of ZnO thin films grown on Si (100) substrate by plasma-enhanced chemical vapor deposition

Effect of the Variation of Temperature on the Structural and Optical Properties of ZnO Thin Films Prepared on Si (1 1 1) Substrates Using PLD

Raman and Photoluminescence of Zno Films Deposited on Si(111) Using Low-Pressure Metalorganic Chemical Vapor Deposition

Growth and Properties of ZnO Thin Film on(111)SrTiO_3

Growth and Photoluminescence Characteristics of High Quality ZnO Films by Pulsed Laser Deposition (PLD) Method

Effects of Substrate Temperature on Structural and Luminescent Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition

The Optical Properties of ZnO Films Grew on Si(111) Substrate