The Optical Properties of ZnO Films Grew on Si(111) Substrate

SU Shi-chen,HU Can-dong,NIU-Bin
DOI: https://doi.org/10.3969/j.issn.1001-9677.2011.09.004
2011-01-01
Abstract:The high quality ZnO films were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy(P-MBE).The ZnO hexagonal structure was observed by scanning electronic microscope(SEM).X-ray diffraction(XRD) showed that the ZnO was wurtzite structure along c-axis direction.The full wave at half Maximum(FWHM) of the(002) was 0.18°.The optical properties of ZnO were studied by the room temperature(RT) and temperature-dependence photoluminescence(PL).The PL spectra of ZnO attributed to donor bound exciton(D0X) at low temperature and free emission(FE) emission at RT.
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