Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Selective Excitation Ofe1(lo)anda1(lo…

Resonant Raman Scattering and Dispersion of Polar Optical and Acoustic Phonons in Hexagonal Inn

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Broadening Factors Ofe1(lo)phonon-Plasmon Coupled Modes of Hexagonal InN Investigated by Infrared Reflectance Measurements

Resonant Raman Scattering in InGaN Alloys

Direct Measurements Of The Lifetimes Of Longitudinal Optical Phonon Modes And Their Dynamics In Inn

LO Phonon-Plasmon Coupled Mode in Hexagonal InGaN Alloy

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Surface optical Raman modes in InN nanostructures

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Temperature Dependence of the A1(LO) and E2 (high) Phonons in Hexagonal InN Nanowires

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Phonon Lifetimes and Phonon Decay in InN

Raman Scattering Spectra of Coupled Lo-Phonon-Plasmon Modes in N-In Codoped P-Type Zno Thin Films

Anisotropic Damping of Longitudinal Optical Phonon-Plasmon Coupling Modes of Inn Films

Electron-Density Dependence of Longitudinal-Optical Phonon Lifetime in Inn Studied by Subpicosecond Time-Resolved Raman Spectroscopy

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Influence of excitation frequency on Raman modes of In1-xGaxN thin films

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Acceptor States in the Photoluminescence Spectra of N-Inn