Synthesis and Interlayer Modification of RbLaTa2O7

Wenfeng Shangguan,Mu Zhang,Jian Yuan,Mingyuan Gu
DOI: https://doi.org/10.1016/s0927-0248(02)00370-7
2003-01-01
Abstract:A layered semiconductor, lanthanum tantalum oxide was prepared by solid reaction at high temperature, and the processes for the modification of the interlayers by protonation, intercalation and pillaring were investigated. n-Butylamine could easily be intercalated into the interlayers of HLaTa2O7 to significantly enhance the interlayer distance, which facilitated the exchange of cation with n-butylamine. Finally, CdO pillars in the interlayer of lanthanum tantalum oxide were formed via calcinating at 500°C in air.
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