BaFe12O19 Films Prepared on Al2O3 (0 0 0 1) by Direct Current Magnetron Sputtering

Xiaozhi Zhang,Yao Zhang,Shixun Cao,Zhenxing Yue,Jincang Zhang

DOI: https://doi.org/10.1016/j.matlet.2019.03.139

IF: 3

2019-01-01

Materials Letters

Abstract:M-type hexaferrite BaFe12O19 films that exhibit a uniaxial magnetic-crystalline anisotropy hold great application promise in the field of magnetic data-storage and microwave devices. In this letter, BaFe12O19 thin films that show an out-of-plane magnetic anisotropy were prepared on c-plane Al2O3 substrates by direct current magnetron sputtering, which is high-efficiency but seldom adopted in the fabrication of ceramic materials including most hexaferrites. In addition, the textured BaFe12O19 film with hexagonal c-axis lying in the film surface was also discussed in this work. The epitaxial-like growth of the BaFe12O19 films was characterized by the combination of x-ray diffractions and pole figures. Self-biasing properties of the films induced by the epitaxial-like structure were reflected in the magnetic measurement of hysteresis loops. The film sample deposited at high temperature of 600 °C exhibited a relatively large remanent magnetization (65% of the saturation magnetization) normal to the film surface, and a small one of <10% along in-plane directions, showing their potential for application in planar magnetic devices with light weight.