Abstract:The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10−8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

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Structure Characterization and Magnetic Properties of Barium Hexaferrite Films Deposited on 6H-Sic with Random In-Plane Orientation

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Effect of annealing temperature on the properties of BaFe 12 O 19 thin films deposited on GGG (111) substrates by pulsed laser deposition

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Effect of annealing temperature on the properties of BaFe12O19 thin films deposited on GGG (1 1 1) substrates by pulsed laser deposition

Growth and Properties of BiFeO3 Thin Films by Molecular-Beam Epitaxy

Magnetic and Structural Properties of BiFeO$_{3}$ Thin Films Grown Epitaxially on SrTiO$_{3}$/Si Substrates

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Room Temperature In-plane <100> Magnetic Easy Axis for Fe3O4/SrTiO3(001):Nb Grown by Infrared PLD

Effect of annealing temperature on crystallographic texture, magnetic and microwave properties of barium ferrite thin films