Effect of Modulated Antiparallel Domain Patterns on the Dielectric Permittivity in Epitaxialbi2ti4

Anquan Jiang,Z. H. Chen,F. Chen,Yueliang Zhou,Meng He,Ge Yang

DOI: https://doi.org/10.1103/physrevb.63.104102

2001-01-01

Abstract:We have used the pulsed laser deposition technique to grow a series of c-axis oriented $x{\mathrm{Bi}}_{2}{\mathrm{Ti}}_{4}{\mathrm{O}}_{11}\ensuremath{-}(1\ensuremath{-}x){\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ films at the morphotropic phase boundary on ${\mathrm{LaNiO}}_{3}$ electroded ${\mathrm{SrTiO}}_{3}$ (100) substrates. The films are alternative stacking of ferroelectric ${\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ and ${\mathrm{Bi}}_{2}{\mathrm{Ti}}_{4}{\mathrm{O}}_{11}$ layers. $P\ensuremath{-}E$ hysteresis loop and capacitance versus voltage measurements show antiparallel domain orientations with adjacent ${\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ and ${\mathrm{Bi}}_{2}{\mathrm{Ti}}_{4}{\mathrm{O}}_{12}$ layers, which enhances the dielectric permittivity of ferroelectric capacitors considerably. Raman studies indicate different symmetry phases of constituent ${\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ in ${\mathrm{Bi}}_{2}{\mathrm{Ti}}_{4}{\mathrm{O}}_{11}$ and ${\mathrm{Bi}}_{4}{\mathrm{Ti}}_{3}{\mathrm{O}}_{12}$ sublayers. The expected internal stresses reorient polar domains and prefer domain orientations in the discrete ferroelectric layers.