Resolving Electronic Inhomogeneity in CdZnTe Bulk Crystal Via Scanning Microwave Impedance Microscopy

Yadong Xu,Yaxu Gu,Ningbo Jia,Siyuan Yu,Xu Han,Yanfeng Chen,Jie Wang
DOI: https://doi.org/10.1002/pssb.201770219
2017-01-01
Abstract:The front cover of this issue points to two main results which were achieved in the work by Yadong Xu et al. (article no. 1600474). First of all, the authors show the ability of near-field scanning microwave impedance microscope (MIM) to map the local electrical properties in a rapid and nondestructive manner, which will be helpful for the characterization of micro-nano structures or defects in bulk crystals. Secondly, well-defined tellurium-rich secondary phase particles (Te-SP) embedded in CdZnTe crystals were observed for the first time according to the significant contrast of the MIM images, attributed to the dielectric and conductivity discrepancy between Te-SP and the CdZnTe matrix. Typical images of Te inclusions embedded in a CdZnTe crystal are shown as the background. Furthermore, a schematic diagram depicting the scanning MIM configuration is presented. The diagram at the bottom relates the line cuts of MIM-Im signal (output of the detected imaginary component of the effective tip-sample impedance) and the respective height taken from the standard AFM signal.
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