Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

A Short-Channel &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$i$ &Lt;/tex-Math> &Lt;/inline-Formula>–<inline-formula> &Lt;tex-Math Notation="latex">$v$ &Lt;/tex-Math> &Lt;/inline-Formula> Model for 2-D MOSFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A continuous analytic <i>I</i>–<i>V</i> model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

3-D Analytical Model for Short-Channel Triple-Gate Junctionless MOSFETs

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

A Short-Channel &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$i$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt;–&lt;inline-formula&gt; &Lt;tex-Math Notation="latex"&gt;$v$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Model for 2-D MOSFETs