Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Spin Relaxation under Identical Dresselhaus and Rashba Coupling Strengths in GaAs Quantum Wells

Spin Relaxation Due to Random Rashba Spin-Orbit Coupling in GaAs (110) Quantum Wells

Anisotropic Spin Transport in Gaas Quantum Wells in the Presence of Competing Dresselhaus and Rashba Spin-Orbit Coupling

Spin Relaxation In N-Type Gaas Quantum Wells With Transient Spin Grating

Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths

Relaxation mechanisms of the persistent spin helix

Spin relaxation assisted by optical phonon scattering in quantum dots: Dresselhaus versus Rashba spin–orbit coupling

Direct Detection of the Relative Strength of Rashba and Dresselhaus Spin-Orbit Interaction: Utilizing the Su(2) Symmetry

A Virtual Intersubband Spin–flip Spin–orbit Coupling Induced Spin Relaxation in GaAs (110) Quantum Wells

Spin Relaxation of Two-Dimensional Electrons with A Hierarchy of Spin-Orbit Couplings

Spin Relaxation in Gaas Quantum Dots

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Spin Current and Spin Hall Effects

The Influence of Inelastic Relaxation Time on Intrinsic Spin Hall Effects in a Disordered Two-Dimensional Electron Gas

Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings

Infinite Spin Diffusion Length of Any Spin Polarization Along Direction Perpendicular to Effective Magnetic Field from Dresselhaus and Rashba Spin–Orbit Couplings with Identical Strengths in (001) GaAs Quantum Wells

Spin relaxation time, spin dephasing time and ensemble spin dephasing time in n-type GaAs quantum wells

Spin Photocurrent Spectra Induced by Rashba- and Dresselhaus-type Circular Photogalvanic Effect at Inter-Band Excitation in InGaAs/GaAs/AlGaAs Step Quantum Wells

Control of Spin Coherence in N-Type Gaas Quantum Wells Using Strain

Spin relaxations in semiconductor quantum dots