THERMAL-SENSITIVE CHARACTERISTICS OF BORON-DOPED DIAMOND FILMS

Ya Jia,Zheng Cheng
1996-01-01
Abstract:Boron-doped diamond films are deposited on the substrate Si3N4 by using microwave PCVD. Ti films are evaporated on the diamond films as ohmic contact electrodes, and then Au films are covered on the Ti films in order to protect the Ti films from oxygenation in high temperature. The electrical resistances R of diamond film samples are measured under a temperature (T) region from room temperature to 600℃. The linear relationship between 1 / T and R can be found. It is thought that thermal-sensitive characteristics of boron-doped diamond films can be controlled by changing the boron doping level and heat-treatment conditions. Results show that the boron-doped diamond film exhibites a high sensitivity and good stability and is a kind of excellent material of thermistor.
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