Abstract:This perspective article presents the advancements being made regarding zinc‐tin oxide‐based memristive devices. A compilation of the works currently available in the literature is done, with an analysis of its mechanical, electrical, and optical properties. It concludes with future perspectives on how improvements to said structures can be achieved and what potential application sectors can be targeted. As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of connected devices, the need for processing large amounts of data in a fast and energy‐efficient way becomes an even more pressing issue. Alternative computation devices such as resistive random access memories (RRAM), or memristors, started taking centre stage as prime candidates to tackle this issue due to their in‐memory computation capabilities. Amorphous oxide semiconductors (AOSs), more specifically eco‐friendly zinc‐tin oxide (ZTO), show great promise as a memristive active material for flexible and sustainable applications due to its low required fabrication temperature, amorphous structure, low‐cost, and critical‐raw‐material‐free composition. In this perspective article, the research progress on ZTO‐based memristors is reviewed in terms of device structure and material compositions. The effects on the electrical performance of the devices are studied. Additionally, neuromorphic and optoelectronic capabilities are analyzed with the objective of finding the best approaches toward implementing these devices in novel computing paradigms.

Metal Oxide Semiconductors for Memory Applications

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Memory Materials and Devices: from Concept to Application

Metal-containing Organic Compounds for Memory and Data Storage Applications

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

Photovoltage Junction Memtransistor for Optoelectronic In-memory Computing

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

CHAPTER 1. Organic Electronic Memory Devices

Recent advances in inorganic oxides-based resistive random-access memory devices

Integrated Memory Devices Based on 2D Materials

Memory Technology: Development, Fundamentals, and Future Trends

Challenges and Recent Advances in HfO2-based Ferroelectric Films for Non-Volatile Memory Applications

Spin and Charge Related Data Storage in Transition Metal Oxides

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Oxide Neuromorphic Transistors for Brain-like Computing

Liquid Metal Memory.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Emerging Spintronic Devices: from Ultra-High-Density Memory to Logic-In-Memory