Abstract:Heteroepitaxy provides an effective path for the synthesis of diamond wafers.After more than 20 years of development,the diamond nucleation and growth technology on iridium substrates has enabled to prepare crystals with a maximum diameter of 3.5 inches,which opens a door to application diamond as ultimate semiconductor in the future chip industry.However,a series of problems that occur on heterogeneous substrates,such as surface nucleation,bias process window,and diamond epitaxial growth,need to overcome from the perspective of growth thermodynamics.In this study,aiming at the key issue how diamond can achieve epitaxial nucleation and growth in chemical vapor deposition atmosphere,a simulation study was carried out on the nucleation and growth process of diamond at the atomic scale based on the first-principle calculation.The results show that the adsorption of C atoms on the surface of the Ir substrate is more stable than that on the bulk phase,which indicates that diamond nucleation can only occur on the substrate surface.The number of C atoms of sp3 hybridization in the amorphous hydrogenated carbon layer increases firstly and then decreases with the increase of ion kinetic energy under ion bombardment,confirming the existence of the ion kinetic energy or bias voltage window in the high-density nucleation of diamond.The interfacial binding energy is the lowest(about-0.58 eV/C)when diamond is epitaxially grown along the Ir substrate,meaning that the interface binding energy is the decisive thermodynamic factor for the epitaxial growth.In conclusion,this study clarifies the thermodynamic mechanism of single crystal diamond epitaxial growth under the bias-assisted ion bombardment,and points out a great significant guidance for the growth of diamond and other carbon based semiconductors.

Heteroepitaxial Diamond Nucleation and Growth on Iridium: First-principle Calculation

Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

Comparison of Heteroepitaxial Diamond Nucleation and Growth on Roughened and Flat Ir/SrTiO3 Substrates

Comparison of heteroepitaxial diamond nucleation and growth on roughened and flat Ir/SrTiO 3 substrates

Heteroepitaxy of diamond semiconductor on iridium: a review

Bias process for heteroepitaxial diamond nucleation on Ir substrates

Recent Progress in Hetero-Epitaxial Growth of the Single-Crystal Diamond

Virtues of Ir(1 0 0) Substrate on Diamond Epitaxial Growth: First-principle Calculation and XPS Study

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

Diamond growth on Ir/CaF2/Si substrates

Growth of twin-free heteroepitaxial diamond on Ir/YSZ/Si(111)

Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures

Growth, stress, and defects of heteroepitaxial diamond on Ir/YSZ/Si(111)

Pre-planting amorphous carbon films based on Ir composite substrates for diamond nucleation

A nucleation site and mechanism leading to epitaxial growth of diamond films

Analysis of Surface Microstructures Formed on Ir Substrate under Different Bias Conditions by Microwave Plasma Chemical Vapor Deposition

Local initial heteroepitaxial growth of diamond (111) on Ru (0001)/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition

Heteroepitaxy of single crystal diamond on Ir buffered KTaO 3 (001) substrates

Heteroepitaxy of single crystal diamond on Ir buffered KTaO3 (001) substrates

Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition