Heteroepitaxy of single crystal diamond on Ir buffered KTaO3 (001) substrates

Qiang Wei,Gang Niu,Ruozheng Wang,Genqiang Chen,Fang Lin,Xiaofan Zhang,Zhaoyang Zhang,Hong-Xing Wang

DOI: https://doi.org/10.1063/5.0045886

IF: 4

2021-01-01

Applied Physics Letters

Abstract:The heteroepitaxy of a single crystal diamond has been carried out in the KTaO3 substrate using Ir as a buffer layer. KTaO3 has a perovskite lattice structure and displays a face-centered cubic structure. Its lattice constant is 3.98 & ANGS;, which is only 3% mismatched with the lattice constant of Ir of 3.84 & ANGS;, and also, its thermal expansion coefficient is 4.031 x 10(-6)/K, which is nearly close to that of diamond 3.85 x 10(-6)/K (at 1223 K), making it to be regarded as an alternate substrate of the heteroepitaxy of a single crystal diamond. The magnetron sputtering technique was used to deposit Ir thin films with a high orientation in the (001) direction on a KTaO3 (001) substrate. Thereafter, bias enhanced nucleation on Ir surface was grown by direct current chemical vapor deposition (CVD) methods. At last, a single crystal diamond with a size of 10 x 10 x 0.78 mm(3) has been grown, whose (004) rocking curve FWHM is 183 arc sec, which testifies to the excellent crystalline quality of the heteroepitaxial diamond film.& nbsp;