Abstract:It is well known that metastable and transient structures in bulk can be stabilized in thin films via epitaxial strain (heteroepitaxy) and appropriate growth conditions that are often far from equilibrium. However, the mechanism of heteroepitaxy, particularly how the nominally unstable or metastable phase gets stabilized, remains largely unclear. This is especially intriguing for thin-film Ga2O3, where multiple crystal phases may exist under varied growth conditions with spatial and dimensional constraints. Herein, the development and distribution of epitaxial strain at the Ga2O3/Al2O3 film-substrate interfaces is revealed down to the atomic resolution along different orientations, with an aberration-corrected scanning transmission electron microscope. Just a few layers of metastable α-Ga2O3 structure were found to accommodate the misfit strain in direct contact with the substrate. Following an epitaxial α-Ga2O3 structure of about couple unit cells, several layers (4-5) of transient phase appear as the intermediate structure to release the misfit strain. Subsequent to this transient crystal phase, the nominally unstable κ-Ga2O3 phase is stabilized as the major thin-film phase form. We show that the epitaxial strain is gracefully accommodated by rearrangement of the oxygen polyhedra. When the structure is under large compressive strain, Ga3+ ions occupy only the oxygen octahedral sites to form a dense structure. With gradual release of the compressive strain, more and more Ga3+ ions occupy the oxygen tetrahedral sites, leading to volumetric expansion and the phase transformation. The structure of the transition phase is identified by high-resolution electron microscopy observation, complemented by the density functional theory calculations. This study provides insights from the atomic scale and their implications for the design of functional thin-film materials using epitaxial engineering.

Electron-Irradiation Induced Unconventional Phase Transition of Β-Ga2o3 Epitaxial Single-Crystal Thin Film Observed by In-Situ Tem

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Phase transition of the HgBa2Ca2Cu3O8 superconducting phase by in-situ heating in transmission electron microscope

Ti-ion-irradiation-induced Phase Transition of Gd2Zr2O7 Pyrochlore

Unraveling the atomic mechanism of the disorder–order phase transition from γ-Ga2O3 to β-Ga2O3

Study Of The Phase Transformation Of Single Particles Of Ga2o3 By Uv-Raman Spectroscopy And High-Resolution Tem

Atomistic Observation Of Phase Transitions In Calcium Sulfates Under Electron Irradiation

Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

The Phase Transition in PrGa0.95Mg0.05O3 at Elevated Temperatures

Spatially Controlled Phase Transition in MoTe 2 Driven by Focused Ion Beam Irradiations

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study

Epitaxially Induced High Temperature (>900K) Cubic-Tetragonal Structural Phase Transition in BaTiO3 Thin Films

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films.

High temperature phase transitions in NaNbO3 epitaxial films grown under tensile lattice strain

Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing

High-temperature structural phase transition in multiferroic LiCu_2O_2

Phase Transition In Batio3 Nanotube Arrays