Abstract:The fascinating realm of silicon quantum dots (Si QDs) has attracted considerable attention for their exceptional optical characteristics and potential applications in the optoelectronic industry. However, there remains a scarcity of research that directly compares the impacts of diverse surface modification methods on the electronic structure and charge transfer properties of Si QD nanomaterials. Considering this scientific challenge, we employ the first-principle calculations to conduct the following investigations. To begin, we have innovatively introduced the concept of the adjacent coordination number (ACN) to establish a quantitative correlation between the band gap (Eg) and the doping sites of boron (B) atoms across various sizes of Si QDs. Additionally, a combination of Total Density of States (TDOS), Partial Density of States (PDOS) and orbital component analysis reveals that the subtle dipole effect near the B-doping site significantly contributes to the reduction in the band gap, providing valuable insights into the complex impact of different doping sites on the electronic arrangement and structure of Si QDs. Ultimately, our absorption spectroscopy, charge transfer and Quantum Theory of Atoms in Molecules (QTAIM) analysis of organic molecule coupling Si QDs reveal the formation of dipoles on the surface and the correlation between charge migration direction and binding sites. This phenomenon not only amplifies the presence of conjugated coupling states but also significantly enhances the charge transfer capability of Si QDs. These valuable insights will provide significant advantages to scientists and researchers endeavoring to tailor the electronic structure and optical attributes of Si QDs using a diverse array of modification techniques to meet specific application requirements. The surface functionalization of Si QDs involves doping or coupling site selection and the establishment of charge transfer bridges is crucial for the formation of dipole–dipole interaction which may not only play a role in regulating band gap structures but also exert significant control over the charge transfer capacity of Si QDs.

Tunability of Size, B Doping and Organic Molecular Coupling to Electronic and Optical Properties of Silicon Quantum Dots

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Boron Doping of Silicon Quantum Dots via Hydrogen Silsesquioxane-Capped Diffusion for Photovoltaics and Medical Imaging

Doping silicon nanocrystals with boron and phosphorus

Lightly boron and phosphorus co-doped silicon nanocrystals

Donor-Acceptor Pair Recombination in Size-Purified Silicon Quantum Dots

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Silicon Nanocrystals Doping and Surface Modification

Doped and Codoped Silicon Nanocrystals: the Role of Surfaces and Interfaces

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers