Abstract:In this paper, a line-scanning irradiation of <0001> 6H-SiC single crystal by a femtosecond laser focus was implemented for laser fluence of 2.2 J/cm 2 at different scanning velocities from 1000 down to 100 μm/s. The morphology of the obtained ablation lines characterized by a scanning electron microscope shows that there progressively appear three-level ripples with average period of about 222, 600 nm and that between them. Possible formation mechanisms for these three-level ripples were analyzed by numerical simulation employing finite-difference time-domain method (FDTD). Analysis shows that as Obara proposed, the interference of incident wave with the wave scattered by scratches possibly left by fine polishing is the most possible reason for inducing 222 nm-period and 600 nm-period ripples. Main discussions were focused on the orientation characteristics of ripples. Both isolated scratches and crossed scratches with different orientation angles were considered for evaluating their role in field redistribution. The detailed simulations indicate that for scratches oriented 90° with respect to laser polarization generate a pair of strongest ripple-like optical field enhancement compared to scratches with other orientation angles. It is these advantages of 90°-oriented scratch in field enhancement that make the final ripple perpendicular to laser polarization most competitive and finally left on the surface. This complements the physical picture of Obara et al. in terms of their negligence in addressing the orientation characteristics of ripples. Further FDTD simulation of the interaction of incident wave with as-formed 600 nm-period ripples shows that the optical field enhancement located between any two adjacent 600 nm-period ripples is the driving force for splitting 600 nm-period ripples into the third ripples with period between 222 and 600 nm.

Research on Periodic Structures Aroused by Femtosecond Laser Irradiation on Single-Crystalline Silicon Wafer

Femtosecond Laser-Induced Cross-Periodic Structures on A Crystalline Silicon Surface under Low Pulse Number Irradiation

Sub-wavelength Ripple Formation on Silicon Induced by Femtosecond Laser Radiation

Femtosecond Laser Induced Ripples And Nanohole Arrays On Silicon

Periodic Ripple Structures on Silicon Substrates Induced by Femtosecond Laser at Various Scan Modes

Study of Femtosecond Laser Induced Periodic Structure on Amorphous Silicon Films and Crystallization Characteristics

Dynamics Of Femtosecond Laser-Induced Periodic Surface Structures On Silicon By High Spatial And Temporal Resolution Imaging

Unclassical ripple patterns in single-crystal silicon produced by femtosecond laser irradiation

Ultrafast Dynamics of Femtosecond Laser Irradiation of Silicon with Different Fluence

The Three-Level Ripples Induced by Femtosecond Laser on a 6H-Sic Single Crystal and the Formation Mechanism

Femtosecond Laser Induced Surface Structuring on Silicon by Diffraction-Assisted Micropatterning

Coalescence and dislocation of laser induced periodic ripples on silicon by double time delayed femtosecond laser beams

Laser-induced Periodic Surface Structure in Silicon Wafer Irradiated by Continuous Laser

Periodic Subwavelength Ripples On A Si Surface Induced By A Single Temporally Shaped Femtosecond Laser Pulse: Enhanced Periodic Energy Deposition And Reduced Residual Thermal Effect

Research on Monocrystalline Silicon Micro-Nano Structures Irradiated by Femtosecond Laser.

Ultrafast Dynamics of Femtosecond Laser-Induced High Spatial Frequency Periodic Structures on Silicon Surfaces

Evolution of Microstructures on Silicon Induced by Femtosecond Laser with Multiple Pulses

Fabrication of Two-Dimensional Periodic Structures on Silicon after Scanning Irradiation with Femtosecond Laser Multi-Beams

Microstructure Evolution And Ft-Ir Spectra Of Silicon Induced By Pulsed Laser Irradiation

Direct Writing of Sub-Wavelength Ripples on Silicon Using Femtosecond Laser at High Repetition Rate

Discussion of the possible formation mechanism of near-wavelength ripples on silicon induced by femtosecond laser