A 1–27 GHz SiGe Low Noise Amplifier with 27 Db Peak Gain and 2.85±1.45 Db NF

Zongxiang Wang,Jixin Chen,Debin Hou,Peigen Zhou,Zhe Chen,Long Wang,Xiaojie Xu,Wei Hong

DOI: https://doi.org/10.1109/tcsii.2024.3350112

2024-01-01

Abstract:This brief presents an ultra-wideband (UWB) low-noise amplifier (LNA) with a 3-dB gain bandwidth (BW) from 1 to 27 GHz (185.7% fractional BW). The resistive-feedback and inductive-peaking techniques are employed to enlarge the bandwidth. Moreover, the inductive-degeneration technique and π-matching network are utilized to realize a wideband noise and input impedance matching simultaneously. The LNA is fabricated in a 0.13-μm SiGe BiCMOS technology. It achieves a peak gain of 27 dB and a minimum noise figure (NF) of 1.4 dB at room temperature. The output-referred 1-dB compression point (OP1dB) is greater than 6.5 dBm over the entire 3-dB gain BW. The S11 is below.10 dB from 1.8 to 24 GHz and S22 is below.10 dB from 1.8 to 30 GHz. In addition, the performance comparison at different temperatures indicates that the LNA can operate correctly from -40 to 100 C without any adjustments, and the variations in gain and NF are less than 3 dB from 1 to 27 GHz and 2 dB from 2.5 to 27 GHz respectively. The LNA occupies an area of 0.9×0.8 mm2 with a core area of 0.64×0.42 mm2.