Influence of Co2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3-based varistors
Jianke Liu,Xingyu Luo,Wenbin Cao,Jiaojiao Chen,Jinfeng Su,Honglin Chen,Zhizhi Li
DOI: https://doi.org/10.1016/j.mssp.2022.107179
IF: 4.1
2023-01-01
Materials Science in Semiconductor Processing
Abstract:In this work, the microstructure (for instance grain size and elemental distribution) and comprehensive electrical performances of ZnO–Bi2O3–Cr2O3–MnO2 varistors, with various amounts of Co2O3 prepared via the traditional solid-state sintering method were investigated. The influences of Co2O3 doping on the microstructure of the ZnO varistors were evaluated via X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectrometer (EDS), while the effects on the electrical performance of the ZnO varistors were analyzed via voltage source meter and inductance-capacitance-resistance meter. The experimental results indicate that Co2O3 doping can contribute to improve the electrical characteristics of ZnO varistors. The double Schottky barrier height φb and nonlinearity coefficient α was enhanced significantly. Meanwhile, Co2O3 doping can effectively reduce ZnO grain resistivity ρg and increase grain boundary resistivity ρgb. In this research, there was an optimal content of Co2O3 (0.5 mol%), the α of the ZnO varistors reaches the maximum value of 46.7 and the φb reaches the maximum value of 0.63 eV with the optimal content.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied