Abstract:Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1-x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1-x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1-x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1-x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W-1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1-x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.

Ferroelectric-induced Carrier Modulation for Ambipolar Transition Metal Dichalcogenide Transistors

Controllable Carrier Concentration of Two-Dimensional TMDs by Forming Transition-Metal Suboxide Layer for Photoelectric Devices

Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

P-N Conversion of Charge Carrier Types and High Photoresponsive Performance of Composition Modulated Ternary Alloy W(SxSe1-x)2 Field-Effect Transistors.

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

The Ambipolar Evolution of a High-Performance WSe2 Transistor Assisted by a Ferroelectric Polymer.

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Van Der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Controllable Carrier Transfer Modulation of Ambipolar Van Der Waals Semiconductors Toward Forksheet FETs

MoTe2/SnSe2 Tunneling Diode Regulated by Giant Ferroelectric Field

Molybdenum Telluride Based Flexible Ambipolar Transistor on Polyimide

Optical Modulation of MoTe2/Ferroelectric Heterostructure Via Interface Doping

Optical Modulation of MoTe2/Ferroelectric Heterostructure via Interface Doping.

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

Reconfigurable MoTe2 Field-Effect Transistors and Its Application in Compact CMOS Circuits

Interface and Interlayer Electron/Exciton-Phonon Coupling of TMDs/InSe for Efficient Charge Transfer and Ultrafast Dynamics: Implications for Field-Effect Devices

Crested two-dimensional transistors

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping