First-principles Calculation of Electronic Structure and Optical Properties of K-doped Orthorhombic Ca_2Si

Qian Chen
2012-01-01
Abstract:The electronic structure and optical properties of K-doped orthorhombic Ca2 Si were calculated and analyzed by using first-principles plane wave pseudopotential method with generalized gradient approximation(GGA).The calculated results show that K-doped Ca2Si is a direct semiconductor that move towards higher energy and the band gap is 0.4318 eV,the sample is p-type semiconductor and its optical bandgap is broadened.The valence bands of K-doped Ca2Si are mainly composed of Si 3p,Ca 3d,4s and K 3p,4s.Furthermore,the dielectric function,the loss function,the reflectivity and the absorption of Ca2Si and K-doped Ca2Si were analyzed in terms of the calculated band structure and densities of states.It can enhance the absorption of infrared range of the sun spectrum for K-doped Ca2Si.The calculation results reveal that the electronic structure and optical properties of Ca2Si can be modulated effectively by doping.They also provide theoretical data for the design and application of optolectronic materials of Ca2Si.
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