Abstract:In order to balance the contradiction between on and off performances of the Schottky diodes, Si-doped beta-(AlxGa1-x)(2)O-3 (beta-AlGaO) single crystals were designed based on the bandgap and impurity engineering of beta-Ga2O3. The bandgap became larger with Al element doping. The photoluminescence properties of Si-doped beta-AlGaO were measured and the emission band was separated into three Gaussian peaks with wavelengths of 372 nm, 410 nm, and 453 nm. These peaks were derived from a self-trapped hole (STH), (V-Ga + V-O)(1-), and V-Ga(2-), respectively. This demonstrated that Al only acted on valence and conduction bands, without introducing intermediate transition levels, indicating excellent bandgap regulation. The thermal properties of Si-doped beta-AlGaO were demonstrated for the first time. Noticeably, a carrier concentration of 4.61 x 10(18) cm(-3) and a resistivity of 0.099 Omega cm were observed at room temperature in Si-doped beta-AlGaO. At low temperatures, the dominant mechanism was ionized impurity scattering, while at high temperatures, optical phonon scattering became dominant. The on-resistance of Schottky barrier diodes (SBDs) prepared using this material was only 1.57 m Omega cm(2), and the Schottky barrier was as high as 1.21 eV. At similar Schottky barrier heights, the on-resistance was 10 times lower compared to beta-Ga2O3 based SBDs. In addition, the device has a high forward current density (J(@2V)) of 521 A cm(-2) at a forward voltage of 2.0 V and an ON-/OFF-current ratio of up to 10(9). This work presents a viable approach for fabricating high-performance vertical structure devices using Si-doped beta-AlGaO materials based on the bandgap structure and impurity engineering.

Sub-bandgap Refractive Indexes and Optical Properties of Si-doped Β-Ga2o3 Semiconductor Thin Films

Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga<sub>2</sub>O<sub>3</sub> semiconductor thin films

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Electronic structures and optical properties of Si- and Sn-doped <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> : A GGA+ <i>U</i> study

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Electronic structures and optical properties of Si- and Sn-doped β-Ga2O3: A GGA+U study

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

First‐Principles Calculations of Electronic Structure and Optical Properties of Si‐Doped and Vacancy Β‐ga2o3

First Principles Calculations of Electronic Structures and Optical Properties of Al- and Ca-doped Β-Si3n4

Direct Determination of Band-Gap Renormalization in Degenerately Doped Ultrawide Band Gap Β- Ga2O3 Semiconductor

First-Principles Investigation of Electronic Structural and Optical Properties of Rare Earth Doped β-Si<sub>3</sub>N<sub>4</sub> Crystals

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

Measurement and Study on Optical Properties of Nano-crystalline Silicon Films

Optical characterization of boron-doped nanocrystalline Si:H thin films

First-Principles Investigation Of Electronic Structural And Optical Properties Of Rare Earth Doped Beta-Si3n4 Crystals

Bandgap Engineering and Schottky Barrier Modulation of Ultra-Wide Bandgap Si-doped Β-(Alxga1-x)2o3 Single Crystals

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Free Carrier-Induced Optical Nonlinearities in Β-Ga2o3 Single Crystals at 355 Nm

Experimental and computational studies on the refractive index and interface state for nano interface of SiO<inf>2</inf>/Si and Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si