Abstract:LaMnO(3) (LMO) films are deposited on SrTiO(3):Nb (0.8 wt%) substrates under various oxygen pressures to obtain different concentrations of oxygen vacancies in the films. The results of X-ray diffraction verify that with a decrease of the oxygen pressure, the c-axis lattice constant of the LMO films becomes larger, owing to an increase of the oxygen vacancies. Aberration-corrected annular-bright-field scanning transmission electron microscopy with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressure during fabrication. Correspondingly, the resistive switching property becomes more pronounced with more oxygen vacancies in the LMO films. Furthermore, a numerical model based on the modification of the interface property induced by the migration of oxygen vacancies in these structures is proposed to elucidate the underlying physical origins. The calculated results are in good agreement with the experimental data, which reveal from a theoretical point of view that the migration of oxygen vacancies and the variation of the Schottky barrier at the interface with applied bias dominate the resistive switching characteristic. It is promising that the resistive switching property in perovskite oxides can be manipulated by controlling the oxygen vacancies during fabrication or later annealing in an oxygen atmosphere.

The Effect of Oxygen Annealing on the Resistance Switching Properties of the La<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Films

Effects of Magnetic-Field Annealing on the Morphology and Magnetic Properties of La 0.7 Sr 0.3 MnO 3 Film

The Vacuum Annealing Effect on the Photoinduced Properties in La0.7Sr0.3MnO3 Thin Film

Effects of oxygen content on the transport property of La0.7Ce0.3MnO3+δ film

Unusual Resistive Switching Induced by Voltage in La0.7Sr0.3MnO3 Thin Films

Electric-pulse-induced reversible resistance change effect of epitaxial La0.67 Sr0.33 MnO3 films

Switching Behavior of Oxygen-Deficient La0.6Ca0.4MnO3−δ Thin Films

Effect of Thermal-Annealing on the Magnetoresistance of Manganite-Based Junctions

Resistive Switching Behavior of Ag/La0.67Sr0.33MnO3/Pt Heterostructures

The Effect of Annealing Temperatures on the Microstructure of La0.5ca0.5mno3 Films

Effect of Annealing in Reduced Oxygen Pressure on the Electrical Transport Properties of Epitaxial Thin Film and Bulk (La1−xndx)0.7sr0.3mno3

OXYGEN DIFFUSION IN EPITAXIAL La_(0.7)Ca_(0.3)MnO_(3-δ) THIN FILMS

Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories.

Effect of Post-Annealing on the Physical and Electrical Properties of Laalo3 Gate Dielectrics

Oxygen pressure dependent electroresistance in La 0.9 Sr 0.1 MnO 3 thin films grown by laser molecular beam epitaxy

TRANSPORT PROPERTIES OF <font>Ag</font>-DOPED <font>La</font><sub>0.7</sub><font>Ca</font><sub>0.3</sub><font>MnO</font><sub>3</sub> THIN FILMS ON SILICON SUBSTRATE

Insulator–metal Transition and Magnetoresistance of La0.5Ca0.5MnOy Induced by Tuning the Oxygen Content

Resistive Switching Characteristics of Epitaxial La0.67Sr0.33MnO3 Films for Nonvolatile Memory Applications

Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors

The Effect of Annealing Temperature on Resistive Switching Behaviors of HfOx Film

Influence of post-annealing on structural, electrical and optical properties of manganese oxide thin films grown by atomic layer deposition

The Effect of Oxygen Annealing on the Resistance Switching Properties of the La&lt;sub&gt;0.7&lt;/sub&gt;Ca&lt;sub&gt;0.3&lt;/sub&gt;MnO&lt;sub&gt;3&lt;/sub&gt; Films