Lowering the Bit‐Energy of Electro‐Optic Modulators Via Polarization‐Phase Modulation in Thin‐Film BaTiO3 Ferroelectric Crystal Waveguide

Na Sun,DeGui Sun,Di Wu,Yinghui Guo,Yulong Fan,Fang Zou,Mingbo Pu,Xiangang Luo

DOI: https://doi.org/10.1002/lpor.202300937

2024-01-01

LASER & PHOTONICS REVIEWS

Abstract:The electro-optic (EO) modulator is a crucial device for achieving high-speed optical communication and optical interconnection by loading the high-frequency electrical signals onto the optical carrier. To date, modern communication technique demands for a low energy consumption for green data center establishment. In this work, a thin-film BaTiO3 crystal waveguide Mach-Zehnder interferometer (MZI) type EO intensity modulator is experimentally implemented and its dynamic-polarization interference process involving a phase-polarization modulation (PPM) scheme other than conventional optical phase modulation (OPM) is carefully analyzed. It findings show that the PPM scheme can efficiently reduce the half-wave voltage (V-pi) and the equivalent half-wave voltage (V-e pi) of the modulator. Then, a new theory of deriving the bit energy (BE) from V-e pi is put forward, which has proven that the BE value under PPM is lower than the OPM counterpart. The EO modulator prototype featuring a length of 1.4 mm, V-e pi= 3.0 V and BE = 1.2 pJ/bit match well with the numerical calculations, thus validating the feasibility to achieve a BE<0.2 pJ/bit for an EO modulator through optimization of the electrode gap and state-of-the-art fabrication techniques in the near future.