Epitaxial Lift-Off Derived High Performance Ferroelectric Thin Film Bulk Acoustic Resonator

Xu Wang,Xiaoli Lu,Zekun Shi,Hanqi Zeng,Huabin Wang,Ye Wang Xiaohua Ma,Yue Hao

DOI: https://doi.org/10.1109/imws-amp57814.2023.10381192

2023-01-01

Abstract:In this article, we develop a simple and efficient method to fabricate a thin film bulk acoustic resonator (FBAR). As developed epitaxial lift-off technology not only solves the problem of poor crystal quality of piezoelectric film directly grown on bottom electrode, but also obtains thinner piezoelectric film to increase operating frequency of the device compared to Smart $\text{Cut}^{\mathrm{T}\mathrm{M}}$ process. Benefitting from the high-quality ferroelectric PbZro.2Tio.803 (PZT) thin film, a resonant frequency up to 8.00 GHz, and electromechanical coupling coefficient $(\mathrm{k}_{\mathrm{t}^{2}})$ of 17.2% were achieved, maintaining good balance between high frequency and wide bandwidth for filter components. These results offer a simple yet promising solution for high performance ferroelectric FBAR, and show great potential of epitaxial lift-off technique for more applications in passive RF devices.