Abstract:Graphene-based photodetectors have shown responsivities up to 10(8) A/W and photoconductive gains up to 10(8) electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity to graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semimetallic nature of graphene, the readout requires dark currents of hundreds of microamperes up to milliamperes, leading to high power consumption needed for the device operation. Here, we propose a different approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark-current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier and giving rise to an alternative gain mechanism. This readout requires dark currents of hundreds of nanoamperes up to a few microamperes, orders of magnitude lower than that of other graphene-based photodetectors, while keeping responsivities of , similar to 70 A/W in the infrared, almost 2 orders of magnitude higher than that of established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.

Graphene-Quantum-Dots-Graphene Heterojunction Waveguide Photodetector with Low Dark Current and High Speed

Silicon-Graphene Heterojunction Waveguide Photodetector with a 3Db-Bandwidth of >14 GHz

Heterostructured Graphene Quantum Dot/wse 2 /si Photodetector with Suppressed Dark Current and Improved Detectivity

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout

A Silicon-Graphene Hybrid Waveguide Photodetector with a 3Db-Bandwidth of 17 GHz

High Detectivity Graphene-Silicon Heterojunction Photodetector.

Hybrid ultrathin-silicon/graphene waveguide photodetector with a loop mirror reflector

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range

Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Graphene/MoS 2 /Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance

High-performance Silicon−graphene Hybrid Plasmonic Waveguide Photodetectors Beyond 1.55 Μm

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

Graphene/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterojunction for ultrafast photodetectors

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Graphene Quantum Dots Enhanced Graphene/si Deep Ultraviolet Avalanche Photodetectors