High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range

Jingshu Guo,Chaoyue Liu,Laiwen Yu,Hengtai Xiang,Yuluan Xiang,Daoxin Dai

DOI: https://doi.org/10.48550/arXiv.2205.07051

2022-05-14

Abstract:Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate graphene-silicon-graphene waveguide PDs operating at the wavelength-bands of 1.55 {\mu}m and 2 {\mu}m, showing the potential for large-scale integration. For the fabricated PDs, the measured responsivities are respectively ~0.15 mA/W and ~0.015 mA/W for the wavelengths of 1.55 {\mu}m and 1.96{\mu}m. In particular, the PDs exhibit a high bandwidth of ~33 GHz, an ultra-low dark current of tens of pico-amperes, a high normalized photo-to-dark-current ratio (NPDR) of 1.63x10^6 W^-1, as well as a high linear dynamic range of 3 {\mu}W-1.86 mW (and beyond) at 1.55 {\mu}m. According to the measurement results for the wavelength-bands of 1.55/2.0 {\mu}m and the theoretical modeling for the silicon-graphene heterostructure, it is revealed that internal photo-emission and photo-assisted thermionic field emission dominantly contribute to the photoresponse in the graphene-silicon Schottky junctions, which helps the future work to further improve the performance.

Optics,Applied Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a high - performance graphene - silicon - graphene waveguide photodetector (PD), which has high bandwidth, low dark current, high light - to - dark current ratio (NPDR), and large linear dynamic range at wavelengths of 1.55 μm and 2 μm. Currently, achieving high - performance silicon - two - dimensional material (2DM) photodetectors is still very challenging, especially in terms of bandwidth, sensitivity, and linearity. Through the design and fabrication of graphene - silicon - graphene heterostructure waveguide photodetectors, this research aims to overcome these challenges and provide a solution that is easy for large - scale integration.

Specifically, the paper focuses on the following points:

1. **High bandwidth**: By optimizing the device structure, such as using a multimode interference (MMI) wavelength - division multiplexer and reducing the RC time constant, a bandwidth of up to approximately 33 GHz is achieved.
2. **Low dark current**: The experimental results show that the dark current of the detector is only tens of picoamperes, which helps to improve the signal - to - noise ratio.
3. **High light - to - dark current ratio (NPDR)**: At a wavelength of 1.55 μm, the normalized light - to - dark current ratio (NPDR) reaches 1.63×10^6 W^-1.
4. **Large linear dynamic range**: At a wavelength of 1.55 μm, the linear dynamic range reaches from 3 μW to 1.86 mW (or even higher).

In addition, the paper also explores the roles of internal photoemission (IPE) and photo - assisted thermionic field emission (PTFE) mechanisms in the graphene - silicon Schottky junction. The contributions of these mechanisms to the photoresponse are helpful for further improving the performance in the future. Through theoretical modeling and experimental verification, the authors reveal the dominant roles of these mechanisms at different wavelengths, providing a theoretical basis for further optimizing device performance.