Diagnosing IGBT Module Degradation by Frequency-domain Heat Flow Analysis

Mengqi Xu,Tianle Cai,Ke Ma,Dangsheng Zhou,Sufei Wang,Tianhao Wu

DOI: https://doi.org/10.1109/ECCE53617.2023.10362797

2023-01-01

Abstract:With the growing demand for highly reliable power electronic systems, the degradation diagnosis of the insulated gate bipolar transistor (IGBT) modules is becoming increasingly attractive. Due to its complicated construction and complex operating conditions, IGBT modules are subject to various degradation mechanisms. However, most existing approaches for degradation diagnosis are designed to identify only one type/location of degradation. In this paper, a novel approach for diagnosing degradations in power modules based on the frequency-domain heat flow analysis is provided. Different locations of degradation can be easily distinguished by using this proposed method, which has been validated through finite-element method (FEM) simulations and experiments.