Abstract:The thermal reliability of two different high-power insulated gate bipolar transistor (IGBT) modules was studied under both conduction and switching regimes by experimental and numerical approaches. Indeed, the reliability of semiconductor devices is tightly linked to the junction temperatures reached in the IGBT, which is a function of the diode chips present in such devices and its operating condition. However, measurements of the semiconductor temperatures are often difficult to be done, thus requiring modeling and simulation tools to accurately evaluate the instantaneous temperature under different thermal loads. For this reason, a transient 3D heat transfer numerical model of two different IGBT power devices was proposed using the Finite Element Method, assuming that heat is dissipated on the IGBT by natural convection and radiation. These simulations were validated with experimental measurements, obtained through infrared thermography, performed for the IGBT modules either opened or enclosed, varying the heat source, the module orientation and under conduction or switching regime. For the switching regime, power losses due to the gate-closing and gate-opening transitions between conducting and non-conducting states were taken into consideration. The heat losses were modeled assuming the time-dependent heat dissipation obtained by previous electrical simulations, and it was compared with time-averaged heat source solutions. Results showed that averaging the heat source can significantly reduce the computational time, allowing quick design explorations. Overall, the numerical model led to deviations of less than 16% over the transient heating and at steady-state. Finally, the impact of a heat sink attached to the IGBT was studied, demonstrating that the proposed model can be used for accurate and quick investigations of potential failures and for the development of more efficient IGBT devices.

Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules: Detection, estimation, and prediction

Condition Monitoring Igbt Module Bond Wires Fatigue Using Short-Circuit Current Identification

LF-OCT Based Non Destructive Testing for IGBT Module

Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability

A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage with Convolutional Neural Networks

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

Thermal Management on IGBT Power Electronic Devices and Modules

Application of Tunnel Magnetoresistance to Health Monitoring of Modular Multilevel Converter Submodules

Condition Monitoring of Power Electronic Converters: Present Status and Key Challenges

A real-time aging monitoring method of parallel-connected IGBT modules

Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop

Impact Of The Thermal-Interface-Material Thickness On Igbt Module Reliability In The Modular Multilevel Converter

Study of Accelerated Power Cycling Test of IGBT Power Modules

A Novel Temperature Sensitive Electrical Parameter of IGBT Modules Without Involvement of Operating Parameters

Thermal and electrical evaluation of insulated gate bipolar transistor (IGBT) power modules

Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach

In-situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-on Delay Time Extracted from Auxiliary Emitter Voltage

An Analytical Approach for IGBT Life Prediction Using Successive Variational Mode Decomposition and Bidirectional Long Short-Term Memory Networks