Abstract:Non-volatile memory (NVM) based computing-in-memory (CIM) shows significant advantages in handling deep learning tasks for artificial intelligence (AI) applications. To overcome the decreasing cost effectiveness of transistor scaling and the intrinsic inefficiency of data-shuttling in the von-Neumann architecture, CIM is proposed to realize high-speed and low-power system with parallel multiplication accumulation (MAC) computing [1] [2]. However, current demonstrations are mainly based on single macro and present limited computing parallelism. Realizing a fully-integrated CIM chip with a complete neural network model is still missing. The major challenges lie in: (1) The IR drop and transient errors when carrying out MAC operations in non-volatile memory arrays decrease the computing accuracy and further limit the parallelism; (2) The inefficiency of the interface blocks between different arrays due to the power overhead of the A/D and D/A converters (shown in Fig. 33.2.1). To address these challenges, this work proposes: (1) A sign-weighted 2T2R (SW-2T2R) array to reduce IR drop by decreasing the accumulative SL current (ISL), and eventually boost the computing parallelism; (2) a low-power interface design with resolution-adjustable LPAR-ADC to realize flexible tradeoff between system accuracy and power consumption. In this manner, this work implements a fully-integrated 784-100-10 MLP model on an integrated CIM chip with158.8kb analog ReRAMs. This chip realizes high recognition accuracy (94.4%) on MNIST database, high inference speed (77 µs/lmage), and 78.4 TOPS/W peak energy efficiency. The CMOS circuits are fabricated in a 130nm process.

A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

An Energy-Efficient Mixed-Bit ReRAM-based Computing-in-Memory CNN Accelerator with Fully Parallel Readout.

RISC-V based Fully-Parallel SRAM Computing-in-Memory Accelerator with High Hardware Utilization and Data Reuse Rate

A 28-Nm 135.19 TOPS/W Bootstrapped-SRAM Compute-in-Memory Accelerator with Layer-Wise Precision and Sparsity

An Energy-Efficient Mixed-Bit CNN Accelerator With Column Parallel Readout for ReRAM-Based In-Memory Computing

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

HPSW-CIM: A Novel ReRAM-Based Computingin-Memory Architecture with Constant-Term Circuit for Full Parallel Hybrid-Precision-Signed-Weight MAC Operation

A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

A CIM-Digital Heterogeneous Accelerating System with Analog Interconnection for Neural Networks

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

A Charge Domain P-8T SRAM Compute-In-Memory with Low-Cost DAC/ADC Operation for 4-bit Input Processing

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

Cambricon-M: A Fibonacci-Coded Charge-Domain SRAM-Based CIM Accelerator for DNN Inference

A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

An 8B-Precison 16-Kb FDSOI 8T SRAM CIM Macro Based on Time-Domain for Energy-Efficient Edge AI Devices

A 28 Nm RRAM-Based 81.1 TOPS/mm2/bit Compute-In-Memory Macro with Uniform and Linear 64 Read Channels under 512 4-Bit Inputs

A Charge-Domain Scalable-Weight In-Memory Computing Macro With Dual-SRAM Architecture for Precision-Scalable DNN Accelerators

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation