Abstract:Non-volatile memory (NVM) based computing-in-memory (CIM) shows significant advantages in handling deep learning tasks for artificial intelligence (AI) applications. To overcome the decreasing cost effectiveness of transistor scaling and the intrinsic inefficiency of data-shuttling in the von-Neumann architecture, CIM is proposed to realize high-speed and low-power system with parallel multiplication accumulation (MAC) computing [1] [2]. However, current demonstrations are mainly based on single macro and present limited computing parallelism. Realizing a fully-integrated CIM chip with a complete neural network model is still missing. The major challenges lie in: (1) The IR drop and transient errors when carrying out MAC operations in non-volatile memory arrays decrease the computing accuracy and further limit the parallelism; (2) The inefficiency of the interface blocks between different arrays due to the power overhead of the A/D and D/A converters (shown in Fig. 33.2.1). To address these challenges, this work proposes: (1) A sign-weighted 2T2R (SW-2T2R) array to reduce IR drop by decreasing the accumulative SL current (ISL), and eventually boost the computing parallelism; (2) a low-power interface design with resolution-adjustable LPAR-ADC to realize flexible tradeoff between system accuracy and power consumption. In this manner, this work implements a fully-integrated 784-100-10 MLP model on an integrated CIM chip with158.8kb analog ReRAMs. This chip realizes high recognition accuracy (94.4%) on MNIST database, high inference speed (77 µs/lmage), and 78.4 TOPS/W peak energy efficiency. The CMOS circuits are fabricated in a 130nm process.

A 3-8Bit Reconfigurable Hybrid ADC Architecture with Successive-approximation and Single-slope Stages for Computing in Memory.

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers

A Column-Parallel Time-Interleaved SAR/SS ADC for Computing in Memory with 2-8bit Reconfigurable Resolution

A 28nm 314.6TLFOPS/W Reconfigurable Floating-Point Analog Compute-In-Memory Macro with Exponent Approximation and Two-Stage Sharing TD-ADC

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

Charge-Domain Static Random Access Memory-Based In-Memory Computing with Low-Cost Multiply-and-Accumulate Operation and Energy-Efficient 7-Bit Hybrid Analog-to-Digital Converter

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

Memory-Immersed Collaborative Digitization for Area-Efficient Compute-in-Memory Deep Learning

A Charge Domain P-8T SRAM Compute-In-Memory with Low-Cost DAC/ADC Operation for 4-bit Input Processing

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

An 11T1C Bit-Level-Sparsity-Aware Computing-in-Memory Macro with Adaptive Conversion Time and Computation Voltage

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

Algorithm/Hardware Co-Design Configurable SAR ADC with Low Power for Computing-in-Memory in 28nm CMOS.

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

RS-CIM: A Charge Domain Compute-in-Memory Architecture with Resolution Shifting ADC for Intelligent Perception Edge Nodes

7.8 A 22nm Delta-Sigma Computing-In-Memory (Δ∑CIM) SRAM Macro with Near-Zero-Mean Outputs and LSB-First ADCs Achieving 21.38TOPS/W for 8b-MAC Edge AI Processing

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

A Low-Power Charge-Domain Bit-Scalable Readout System for Fully-Parallel Computing-in-Memory Accelerators