Abstract:Two-dimensional materials, especially the transition-metal dichalcogenides, have shown their potential application for next-generation electronics and optoelectronics devices. In view of the practical application, large-scaled synthesis of high crystallinity continuous films has attracted much attention. Even though large-scaled films or flakes synthesized on insulating substrates have already been reported, growing continuous films on SiO2 substrates remains challenging. Also, generally, p-typed triangular WSe2 nanoplates are used as seeds in the synthesis process. In this work, hexagonal WSe2 nanoplates are successfully grown on SiO2 substrates by a NaCl-assistant vapor deposition method. The temperature dependence of the recombination dynamics was studied by a combination of Raman and photoluminescence spectroscopy. Interestingly, as-grown crystals show tunable polarity characteristics by applying back gate voltages. The carrier mobility is calculated to be 0.4 and 0.05 cm2·V–1·s–1 in the p and n regimes, respectively. Moreover, WSe2-based photodetectors generate photocurrent with a fast response time, which together with the photoswitch ratio exceeds 4.8×102 illuminated by a 633 nm laser light. The responsivity and detectivity are 3.64 mA/W and 1.67 × 108 Jones at a bias of 1 V, respectively. Importantly, comparing this with the synthesis process using triangular WSe2 nanoplates, it is demonstrated that hexagonal ambipolar WSe2 with promising probability to synthesize large-scaled continuous films with large grains is possible.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.1c00521?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.1c00521</a>.E2g and A1g Raman-active mode mapping images at room temperature and optical microscopy image of the high-coverage continuous film (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.1c00521/suppl_file/an1c00521_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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