D. Rhodes,D. A. Chenet,B. E. Janicek,C. Nyby,Y. Lin,W. Jin,D. Edelberg,E. Mannebach,N. Finney,A. Antony,T. Schiros,T. Klarr,A. Mazzoni,M. Chin,Y. -c Chiu,W. Zheng,Q. R. Zhang,F. Ernst,J. I. Dadayp,X. Tong,J. Ma,R. Lou,S. Wan,T. Qian,H. Ding,R. M. Osgood,D. W. Paley,A. M. Lindenberg,P. Y. Huang,A. N. Pasupathy,M. Dubey,J. Hone,L. Balicas

Abstract:MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.

Ferroelectric Phase Transition in a 1T Monolayer of MoTe2: A First-Principles Study

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Room-temperature ferroelectricity in MoTe 2 down to the atomic monolayer limit

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Raman Signatures of Inversion Symmetry Breaking and Structural Phase Transition in Type-Ii Weyl Semimetal MoTe2.

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Strain-mediated Phase Transition of MoTe2 Monolayer

Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

Coupled Ferroelectricity and Superconductivity in Bilayer $T_d$-MoTe$_2$

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Ferroelectric Polarization Controlled Orbital Hall Conductivity in a Higher-Order Topological Insulator: D1t -Phase Monolayer MoS2

Ferroelectric metals in 1T/1T'-phase transition metal dichalcogenide MTe2 bilayers (M = Pt, Pd, and Ni)

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

Soft Hydrogen Plasma Induced Phase Transition in Monolayer and Few-Layer MoTe2

An Assessment of Thermally Driven Local Structural Phase Changes in 1$T$$'$- MoTe$_2$

Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS$_2$

Polarization-driven band topology evolution in twisted MoTe$_2$ and WSe$_2$

Strain-Controllable Phase and Magnetism Transitions in Re-Doped MoTe2 Monolayer

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Origin of the Anomalous Electrical Transport Behavior in Fe-Intercalated Weyl Semimetal Td -Mote2.