Abstract:Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS 2 ) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS 2 , while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS 2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS 2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P 3 m 1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS 2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS 2 in flexible memory and electromechanical devices.

Room-temperature ferroelectricity in MoTe 2 down to the atomic monolayer limit

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-Mos2 above Room Temperature

Out-of-Plane Ferroelectricity in Two-Dimensional 1T′′′-MoS 2 Above Room Temperature

Observation of room-temperature ferroelectricity in elemental Te nanowires

Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Direct observation of ferroelectricity in two-dimensional MoS2

Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

Ta Doping Enhanced Room‐Temperature Ferromagnetism in 2D Semiconducting MoTe2 Nanosheets

Coupled Ferroelectricity and Superconductivity in Bilayer $T_d$-MoTe$_2$

Room-Temperature Ferroelectricity in 1T^{'}-Res_{2} Multilayers.

Persistence of Monoclinic Crystal Structure in Three-Dimensional Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake without Structural Phase transition

Room-Temperature Ferroelectricity in 1 T ′ - ReS 2 Multilayers

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Vapor Deposition of Bilayer 3R MoS2 with Room‐Temperature Ferroelectricity

Molecular ferroelectric with low-magnetic-field magnetoelectricity at room temperature

Giant piezoelectricity and ferroelectricity in two-dimensional ThOTe monolayer

Observation of Room‐temperature Out‐of‐plane Switchable Electric Polarization in Supported 3r‐mos2 Monolayers