Molecular ferroelectric with low-magnetic-field magnetoelectricity at room temperature

Zhao-Bo Hu,Xinyu Yang,Jinlei Zhang,Ling-Ao Gui,Yi-Fan Zhang,Xiao-Dong Liu,Zi-Han Zhou,Yucheng Jiang,Yi Zhang,Shuai Dong,You Song
DOI: https://doi.org/10.1038/s41467-024-49053-y
IF: 16.6
2024-06-04
Nature Communications
Abstract:Magnetoelectric materials, which encompass coupled magnetic and electric polarizabilities within a single phase, hold great promises for magnetic controlled electronic components or electric-field controlled spintronics. However, the realization of ideal magnetoelectric materials remains tough due to the inborn competion between ferroelectricity and magnetism in both levels of symmetry and electronic structure. Herein, we introduce a methodology for constructing single phase paramagnetic ferroelectric molecule [TMCM][FeCl 4 ], which shows low-magnetic-field magnetoelectricity at room temperature. By applying a low magnetic field (≤1 kOe), the halogen Cl‧‧‧Cl distance and the volume of [FeCl 4 ] − anions could be manipulated. This structural change causes a characteristic magnetostriction hysteresis, resulting in a substantial deformation of ~10 −4 along the a -axis under an in-plane magnetic field of 2 kOe. The magnetostrictive effect is further qualitatively simulated by density functional theory calculations. Furthermore, this mechanical deformation significantly dampens the ferroelectric polarization by directly influencing the overall dipole configuration. As a result, it induces a remarkable α 31 component (~89 mV Oe −1 cm −1 ) of the magnetoelectric tensor. And the magnetoelectric coupling, characterized by the change of polarization, reaches ~12% under 40 kOe magnetic field. Our results exemplify a design methodology that enables the creation of room-temperature magnetoelectrics by leveraging the potent effects of magnetostriction.
multidisciplinary sciences
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to realize magnetoelectric coupling materials under low magnetic fields at room temperature. Specifically, researchers are committed to developing a molecular ferroelectric that can exhibit a significant magnetoelectric effect under low - magnetic - field conditions. This material can be used for magnetically - controlled electronic components or electric - field - controlled spintronics applications. However, the current challenge lies in how to introduce effective magnetism while maintaining the ferroelectricity of the material, thereby achieving ideal magnetoelectric coupling. ### Background and Problems 1. **Importance of Magnetoelectric Materials** - Magnetoelectric materials have simultaneously coupled magnetic and electric polarization characteristics, which endow them with great application potential in fields such as high - density data storage, spintronics, and low - power - consumption nanoelectronics. - The key to realizing these applications is to effectively control the magnetoelectric coupling effect under low magnetic fields and at room temperature. 2. **Limitations of Existing Materials** - At present, only a few materials can exhibit clear magnetic and electric polarization coupling at room temperature, such as bismuth ferrite (BiFeO₃) and hexagonal RMnO₃ (R represents a rare - earth element). - Although molecular materials have the advantages of both organic and inorganic materials, achieving magnetoelectric coupling at room temperature and under low magnetic fields remains a great challenge. The main reason is that the magnetic and electric polarization properties of molecular materials usually exist stably only at lower temperatures. 3. **Research Objectives** - Develop a molecular ferroelectric that can achieve significant magnetoelectric coupling through low magnetic fields (≤1 kOe) at room temperature. - The specific objective is to achieve the magnetostrictive effect through structural changes (such as changes in the halogen Cl···Cl distance and changes in the volume of the [FeCl₄]⁻ anion), which in turn affects the ferroelectric polarization and finally realizes magnetoelectric coupling. ### Solutions 1. **Material Selection** - A Fe(III) - based molecular complex [TMCM][FeCl₄] (TMCM = trimethylchloromethylammonium) was selected. This material exhibits ferroelectricity and magnetostrictive effect at room temperature. 2. **Experimental Methods** - The ferroelectricity and magnetostrictive effect of the material were characterized by multiple experimental means (such as differential scanning calorimetry, second - harmonic generation, X - ray diffraction, atomic force microscopy, piezoelectric force microscopy, etc.). - The experimental results were further verified by density functional theory (DFT) calculations, and the magnetoelectric coupling mechanism of the material under low magnetic fields was explained. 3. **Main Findings** - [TMCM][FeCl₄] exhibits a significant magnetoelectric coupling effect at room temperature. Its magnetoelectric tensor component α₃₁ reaches approximately 89 mV Oe⁻¹cm⁻¹, which is much higher than the value of the traditional multiferroic material BiFeO₃. - An external magnetic field can significantly change the ferroelectric polarization of the material, with a maximum change rate of up to 12%. ### Conclusions This research has successfully developed a molecular ferroelectric [TMCM][FeCl₄] that can achieve significant magnetoelectric coupling through low magnetic fields at room temperature, providing new ideas and methods for future magnetoelectric material design. This achievement is expected to promote the development of fields such as high - density data storage, spintronics, and low - power - consumption nanoelectronics.