Ligand induced structure and property changes of 1T-MoS2

Yaoyao Linghu,Na Li,Yaping Du,Chao Wu

DOI: https://doi.org/10.1039/c9cp00917e

IF: 3.3

2019-01-01

Physical Chemistry Chemical Physics

Abstract:Surface functionalization converts 1T phase MoS2 monolayers into 1T′ phases, producing unpredictable results for band gap engineering.

What problem does this paper attempt to address?

Ligand induced structure and property changes of 1T-MoS 2 .

Yaoyao Linghu,Na Li,Yaping Du,Chao Wu

DOI: https://doi.org/10.1039/c9cp00917e

IF: 3.3

2019-01-01

Physical Chemistry Chemical Physics

Abstract:Stabilizing metastable 1T-MoS2 sheets is significant for their potential applications. In this work, we investigate the influence of surface adsorption of a series of functional groups (including -H, -O, -SH, -NH2, -CH3, -CF3, -SCH3 and -OCH3) on the structural and electronic properties of 1T-MoS2 by using first-principles calculations. Strong adsorptions of these functional groups eventually transform 1T-related MoS2 monolayers into the 1T' phase (featuring zigzag Mo-Mo chains). The adsorptions of functional groups on 1T'-MoS2 monolayers highly prefer half of the surface sites (the St sites) and try to form adsorbate pairs at the St sites of the second nearest neighbors, which means that the study of surface-decorated 1T'-MoS2 monolayers should not be based on randomly generated configurations. Factors like the type of functional group as well as its coverage and configurations make the relationship between the structure of the adsorbate-MoS2 complex and its electronic properties (e. g. band gap) unclear, which implies that the band gap engineering through surface adsorption is unpredictable.
Pressure confinement effect in MoS2 monolayers.

Li Fangfei,Yan Yalan,Han Bo,Li Liang,Huang Xiaoli,Yao Mingguang,Gong Yuanbo,Jin Xilian,Liu Baoli,Zhu Chuanrui,Zhou Qiang,Cui Tian

DOI: https://doi.org/10.1039/c5nr00580a

IF: 6.7

2015-01-01

Nanoscale

Abstract:With ever increasing interest in layered materials, molybdenum disulfide has been widely investigated due to its unique optoelectronic properties. Pressure is an effective technique to tune the lattice and electronic structure of materials such that high pressure studies can disclose new structural and optical phenomena. In this study, taking MoS2 as an example, we investigate the pressure confinement effect on monolayer MoS2 by in situ high pressure Raman and photoluminescence (PL) measurements. Our results reveal a structural deformation of monolayer MoS2 starting from 0.84 GPa, which is evidenced by the splitting of E-2g(1) and A(1g) modes. A further compression leads to a transition from the 1H-MoS2 phase to a novel structure evidenced by the appearance of two new peaks located at 200 and 240 cm(-1). This is a distinct feature of monolayer MoS2 compared with bulk MoS2. The new structure is supposed to have a distorted unit with the S atoms slided within a single layer like that of metastable 1T'-MoS2. However, unlike the non-photoluminescent 1T'-MoS2 structure, our monolayer shows a remarkable PL peak and a pressure-induced blue shift up to 13.1 GPa. This pressure-dependent behavior might enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.
2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

Zhiguo Wang

DOI: https://doi.org/10.1039/C8TC04951C

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted much scientific attention for applications in nanoelectronic and optoelectronic devices. The physical and chemical properties of 2D TMDs depend on their phase structures. In this study, electron doping-induced 2H → 1T′ structural transformation of MoS2, Janus MoSSe and MoSTe monolayers was studied by using density functional theory. Phonon dispersion calculation showed that both 2H- and 1T′-MoSX (X–S, Se and Te) monolayers were dynamically stable. Janus monolayer 2H-MoSX exhibited band gap of 1.0–1.68 eV, whereas Janus monolayer 1T′-MoSX was found to be a semiconductor with narrow band gap of 0.13–0.26 eV. The critical values of electron concentration to trigger 2H → 1T′ structural phase transformation decreased as X atom changed from S to Te in MoSX (X–S, Se and Te) monolayer. The in-plane stiffness decreased with increasing electron concentration for 2H-phase, whereas that of the 1T′-phase changed slightly with electron concentration; thus, electron doping destabilized the crystal structure of 2H-phase. The 1T′-phase could provide an efficient hole injection contact to 2H-MoS2 for use in nano-electronic devices.
In-Plane Anisotropic Properties Of 1t '-Mos2 Layers

Gwang-Hyeon Nam,Qiyuan He,Xingzhi Wang,Yifu Yu,Junze Chen,Kang Zhang,Zhenzhong Yang,Dianyi Hu,Zhuangchai Lai,Bing Li,Qihua Xiong,Qing Zhang,Lin Gu,Hua Zhang

DOI: https://doi.org/10.1002/adma.201807764

IF: 29.4

2019-01-01

Advanced Materials

Abstract:Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T '), and trigonal prismatic (2H) phases. Among these, the 1T ' phase offers unique properties and advantages in various applications. Moreover, the 1T ' phase consists of unique zigzag chains of the transition metals, giving rise to interesting in-plane anisotropic properties. Herein, the in-plane optical and electrical anisotropies of metastable 1T '-MoS2 layers are investigated by the angle-resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J(1) and J(2) peaks in the angle-resolved Raman spectra is a key characteristic of high-quality 1T '-MoS2 crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.
Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Penghua Ying,Jin Zhang,Jianli Zhou,Qixin Liang,Zheng Zhong

DOI: https://doi.org/10.1016/j.commatsci.2020.109691

IF: 3.572

2020-01-01

Computational Materials Science

Abstract:As a new class of one-dimensional (1D) transition-metal monochalcogenides (TMMs) nanowires (NWs), the recently synthesized MoS NWs exhibit potential applications in two-dimensional integrated circuit. However, their mechanical behaviors remain almost unexplored. In this paper, the mechanical behaviors of MoS NWs under tensile loading are studied by classical molecular dynamics simulations together with first-principles calculations. A novel phase transformation is observed in the MoS NWs when the strain applied to them is larger than a critical value, which results in tension-induced hardening in their tensile modulus. Due to the existence of phase transformation, a complicated mechanical response is observed in MoS NWs during the entire loading process, which successively experiences the linear, plateau, stress hardening and fracture stages. The influence of various factors including the strain rate and temperature on the mechanical properties of MoS NWs such as phase transformation, Young's modulus, fracture strength and fracture strain are also examined. The mechanical properties of MoS NWs obtained in this paper will be beneficial to their future applications in the semiconducting field. It is also expected that the results of the tension-induced phase transformation and its influence on the material properties observed in the present MoS NWs can be further extended to other 1D TMMs such as MoTe and SnSe NWs, since these 1D TMMs are found to possess the similar structure.
Observation of Gap Opening in 1T' Phase MoS2 Nanocrystals

Hai Xu,Dong Han,Yang Bao,Fang Cheng,Zijing Ding,Sherman J R Tan,Kian Ping Loh

DOI: https://doi.org/10.1021/acs.nanolett.8b01953

2018-08-08

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) manifest in various polymorphs, which deliver different electronic properties; the most prominent among them include the semiconducting 2H phase and metallic 1T (or distorted 1T' phase) phase. Alkali metal intercalation or interface strain has been used to induce semiconductor-to-metal transition in a monolayer MoS2 sheet, leading to exotic quantum states or improved performance in catalysis. However, the direct growth of 1T or 1T' phase MoS2 is challenging due to its metastability. Here, we report MBE growth of isolated 1T' and 2H MoS2 nanocrystals on a Au substrate; these nanocrystals can be differentiated unambiguously by their electronic states using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). By studying the initial stages of nucleation during molecular beam epitaxy (MBE) of MoS2, we could identify atomic clusters (30-50 atoms) with intralayer stacking corresponding to 1T' and 2H separately, which suggests a deterministic growth mechanism from initial nuclei. Furthermore, a topological insulator type behavior was observed for the 1T' MoS2 crystals, where an energy gap opening of 80 meV was measured by STS in the basal plane at 5 K, with the edge of the nanocrystals remaining metallic.
Structures and phase transition of a MoS2 monolayer

Min Kan,Jinying Wang,X. W. Li,Shunhong Zhang,Yawei Li,Yushiyuki Kawazoe,Qiang Sun,Puru Jena

DOI: https://doi.org/10.1021/jp4076355

2014-01-01

Abstract:As an inorganic cousin of graphene, MoS2 monolayer has attracted considerable attention. However, a full understanding of its structure and stability is still lacking due to its dependence on experimental synthesis conditions. Using first-principle calculations combined with Boltzmann transport equation, we have extensively studied the geometry, energetics, electronic structure, optical absorption, and carrier mobility of various phases of MoS2. We have not only identified the stable phases of a MoS2 monolayer, but also clarified the specific conditions under which different phases are formed. The possible pathways for transitions among different phases are also discussed.
Local Engineering of Topological Phase in Monolayer MoS 2

Zhichang Wang,Xiaoqiang Liu,Jianqi Zhu,Sifan You,Ke Bian,Guangyu Zhang,Ji Feng,Ying Jiang

DOI: https://doi.org/10.1016/j.scib.2019.10.004

IF: 18.9

2019-01-01

Science Bulletin

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with the 1T' structure are a new class of large-gap two-dimensional (2D) topological insulators, hosting topologically protected conduction channels on the edges. However, the 1T' phase is metastable compared to the 2H phase for most of 2D TMDCs, among which the 1T' phase is least favored in monolayer MoS2. Here we report a clean and controllable technique to locally induce nanometer-sized 1T' phase in monolayer 2H-MoS2 via a weak Argon-plasma treatment, resulting in topological phase boundaries of high density. We found that the stabilization of 1T' phase arises from the concerted effects of S vacancies and the tensile strain. Scanning tunneling spectroscopy (STS) clearly reveals a spin-orbit band gap (similar to 60 meV) and topologically protected in-gap states residing at the 1T'-2H phase boundary, which are corroborated by density-functional theory (DFT) calculations. The strategy developed in this work can be generalized to a large variety of TMDCs materials, with potentials to realize scalable electronics and spintronics with low dissipation. (C) 2019 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Local engineering of topological phase in monolayer MoS2

Zhichang Wang,Xiaoqiang Liu,Jianqi Zhu,Sifan You,Ke Bian,Guangyu Zhang,Ji Feng,Ying Jiang

DOI: https://doi.org/10.1016/j.scib.2019.10.004

IF: 18.9

2019-12-01

Science Bulletin

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with the 1T' structure are a new class of large-gap two-dimensional (2D) topological insulators, hosting topologically protected conduction channels on the edges. However, the 1T' phase is metastable compared to the 2H phase for most of 2D TMDCs, among which the 1T' phase is least favored in monolayer MoS2. Here we report a clean and controllable technique to locally induce nanometer-sized 1T' phase in monolayer 2H-MoS2 via a weak Argon-plasma treatment, resulting in topological phase boundaries of high density. We found that the stabilization of 1T' phase arises from the concerted effects of S vacancies and the tensile strain. Scanning tunneling spectroscopy (STS) clearly reveals a spin-orbit band gap (~60 meV) and topologically protected in-gap states residing at the 1T'-2H phase boundary, which are corroborated by density-functional theory (DFT) calculations. The strategy developed in this work can be generalized to a large variety of TMDCs materials, with potentials to realize scalable electronics and spintronics with low dissipation.

multidisciplinary sciences
Structure Re-determination and Superconductivity Observation of Bulk 1T MoS2

Yuqiang Fang,Jie Pan,Jianqiao He,Ruichun Luo,Dong Wang,Xiangli Che,Kejun Bu,Wei Zhao,Pan Liu,Gang Mu,Hui Zhang,Tianquan Lin,Fuqiang Huang

DOI: https://doi.org/10.1002/anie.201710512

2017-12-26

Abstract:2H MoS2 has been intensively studied because of layer-dependent electronic structures and novel physical properties. Though the metastable 1T MoS2 with the [MoS6] octahedron was observed from the microscopic area, the true crystal structure of 1T phase has not been determined strictly. Moreover, the true physical properties have not been demonstrated from experiments due to the challenge for the preparation of pure 1T MoS2 crystals. Here, we successfully synthesized the 1T MoS2 single crystals and re-determined the crystal structure of 1T MoS2 from single-crystal X-ray diffraction. 1T MoS2 crystalizes in space group P-3m1 with a cell of a = b = 3.190(3) Å and c = 5.945(6) Å. The individual MoS2 layer consists of MoS6 octahedron sharing edge with each other. More surprisingly, the bulk 1T MoS2 crystals undergo a superconducting transition of Tc = 4 K, which is the first observation of superconductivity in pure 1T MoS2 phase.

Superconductivity
Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

Lina Liu,Juanxia Wu,Liyuan Wu,Meng Ye,Xiaozhi Liu,Qian Wang,Siyao Hou,Pengfei Lu,Lifei Sun,Jingying Zheng,Lei Xing,Lin Gu,Xiangwei Jiang,Liming Xie,Liying Jiao

DOI: https://doi.org/10.1038/s41563-018-0187-1

IF: 41.2

2018-01-01

Nature Materials

Abstract:Two-dimensional (2D) MoS2, which has great potential for optoelectronic and other applications, is thermodynamically stable and hence easily synthesized in its semiconducting 2H phase. In contrast, growth of its metastable 1T and 1T' phases is hampered by their higher formation energy. Here we use theoretical calculations to design a potassium (K)-assisted chemical vapour deposition method for the phase-selective growth of 1T' MoS2 monolayers and 1T'/2H heterophase bilayers. This is realized by tuning the concentration of K in the growth products to invert the stability of the 1T' and 2H phases. The synthesis of 1T' MoS2 monolayers with high phase purity allows us to characterize their intrinsic optical and electrical properties, revealing a characteristic in-plane anisotropy. This phase-controlled bottom-up synthesis offers a simple and efficient way of manipulating the relevant device structures, and provides a general approach for producing other metastable-phase 2D materials with unique properties.
Structural Determination and Nonlinear Optical Properties of New 1T‴-Type MoS2 Compound

Yuqiang Fang,Xiaozong Hu,Wei Zhao,Jie Pan,Dong Wang,Kejun Bu,Yuanlv Mao,Shufen Chu,Pan Liu,Tianyou Zhai,Fuqiang Huang

DOI: https://doi.org/10.1021/jacs.8b12133

IF: 15

2019-01-01

Journal of the American Chemical Society

Abstract:Noncentrosymmetric MoS2 semiconductors (1H, 3R) possess not only novel electronic structures of spin-orbit coupling (SOC) and valley polarization but also remarkable nonlinear optical effects. A more interesting noncentrosymmetric structure, the so-called 1T‴-MoS2 layers, was predicted to be built up from [MoS6] octahedral motifs by theoreticians, but the bulk 1T‴ MoS2 or its single crystal structure has not been reported yet. Here, we have successfully harvested 1T‴ MoS2 single crystals by a topochemical method. The new layered structure is determined from single-crystal X-ray diffraction. The crystal crystallizes in space group P31m with a cell of a = b = 5.580(2) Å and c = 5.957(2) Å, which is a √3 a × √3 a superstructure of 1T MoS2 with corner-sharing Mo3 triangular trimers observed by the STEM. 1T‴ MoS2 is verified to be semiconducting and possesses a band gap of 0.65 eV, different from metallic nature of 1T or 1T' MoS2. More surprisingly, the 1T‴ MoS2 does show strong optical second-harmonic generation signals. This work provides the first layered noncentrosymmetric semiconductor of edge-sharing MoS6 octahedra for the research of nonlinear optics.
Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Lifei Sun,Xingxu Yan,Jingying Zheng,Hongde Yu,Zhixing Lu,Shang-Peng Gao,Lina Liu,Xiaoqing Pan,Dong Wang,Zhiguo Wang,Peng Wang,Liying Jiao

DOI: https://doi.org/10.1021/acs.nanolett.8b00452

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with layered structures provide a unique platform for exploring the effect of number of layers on their fundamental properties. However, the thickness scaling effect on the chemical properties of these materials remains unexplored. Here, we explored the chemically induced phase transition of 2D molybdenum disulfide (MoS2) from both experimental and theoretical aspects and observed that the critical electron injection concentration and the duration required for the phase transition of 2D MoS2 increased with decreasing number of layers. We further revealed that the observed dependence originated from the layer-dependent density of states of 2H-MoS2 , which results in decreasing phase stability for 2H-MoS2 with increasing number of layers upon electron doping. Also, the much larger energy barrier for the phase transition of monolayer MoS2 induces the longer reaction time required for monolayer MoS2 as compared to multilayer MoS2 . The layer-dependent phase transition of 2D MoS2 allows for the chemical construction of semiconducting-metallic heterophase junctions and, subsequently, the fabrications of rectifying diodes and all 2D field effect transistors and thus opens a new avenue for building ultrathin electronic devices. In addition, these new findings elucidate how electronic structures affect the chemical properties of 2D TMDCs and, therefore, shed new light on the controllable chemical modulations of these emerging materials.
Metastable MoS2: crystal structure, electronic band structure, synthetic approach and intriguing physical properties.

Wei Zhao,Jie Pan,Yuqiang Fang,Xiangli Che,Dong Wang,Kejun Bu,Fuqiang Huang

DOI: https://doi.org/10.1002/chem.201801018

2018-01-01

Chemistry - A European Journal

Abstract:The 2H molybdenum disulfide (MoS2), as a stable hexagonal phase, has been one of the most studied transition metal dichalcogenides over the past decades. In the last five years, the metastable phases of MoS2 (1T, 1T', 1T ", and 1T"') have seen a revival of interests. Different from the edge-sharing [MoS6] trigonal prisms in the 2H MoS2 phase, these metastable phases are composed of the edge-sharing [MoS6] octahedra, in which the neighboring Mo-Mo distances differ. Due to the various crystal structures and different electronic configurations of the building [MoS6] motifs, these metastable polytypes are endowed with intriguing physical properties and potential applications in diverse fields. In this Review, the recent research progress on metastable MoS2 is summarized, especially with an emphasis on the diverse synthetic approaches and the newly uncovered physical properties. The phase structures and electronic band structures are also outlined. In the end, a perspective of the future investigation on metastable MoS2 is discussed.
Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

C. Shang,B. Lei,W. Z. Zhuo,Q. Zhang,C. S. Zhu,J. H. Cui,X. G. Luo,N. Z. Wang,F. B. Meng,L. K. Ma,C. G. Zeng,T. Wu,Z. Sun,F. Q. Huang,X. H. Chen

DOI: https://doi.org/10.1103/PhysRevB.100.020508

2019-02-25

Abstract:Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS$_2$ thin flakes driven by electric field. We found that the metastable structure of 1T$^{'''}$-MoS$_2$ thin flake can be transformed into another metastable structure of 1T$^{'}$ -type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T$^{'}$ phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T$^{'}$-LiMoS$_2$ to superconducting 1T$^{'}$-MoS$_2$. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nano-devices with highly tunable characteristics under electric field.

Superconductivity,Materials Science
Electronic and Transport Properties of 2H 1−x 1T X MoS 2 Hybrid Structure: A First-Principle Study

Jie Sun,Na Lin,Cheng Tang,Haoyuan Wang,Hao Ren,Xian Zhao

DOI: https://doi.org/10.1016/j.physe.2017.04.026

IF: 3.369

2017-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:The impure 1T phase (mixed with 2H phase) MoS2 electrodes adopted in 2H phase MoS2-based Field effect transistors (FETs) has been demonstrated efficiently decreasing the contact resistance in recent experiment. Here, first principles calculations are carried out to reveal the electronic and transport properties of the hybrid electrode 2H1−x1Tx MoS2 with different 1T compositions. Our calculated results show that the stability of hybrid 2H1−x1Tx MoS2 system is decreased as increasing the concentration of 1T phase. The band gaps are largely reduced as introducing 1T phase to 2H phase MoS2. The occurrence of flat band around the Fermi level of the hybrid 2H1−x1Tx MoS2 system is not beneficial for the electronic transport. Different transmission performances of each configuration indicate that transmission probabilities are not only subjected to the concentration of 1T phase, but also depending on the specific arrangement of the two phase structure. It is found that binding energies of O2 molecule adsorbed on the phase boundaries of the hybrid 2H1−x1Tx MoS2 is enlarged compared with that on pure 2H and 1T MoS2, accompanying with charge transfer from the substrate to adsorbate. To protect the hybrid 2H1−x1Tx MoS2 state from molecule adsorption, we predict that BN sheet can be used as an effective encapsulating material.
Bandgap Opening in MoTe2 Thin Flakes Induced by Surface Oxidation

Yuan Gan,Jiyuan Liang,Chang-woo Cho,Si Li,Yanping Guo,Xiaoming Ma,Xuefeng Wu,Jinsheng Wen,Xu Du,Mingquan He,Chang Liu,Shengyuan A. Yang,Kedong Wang,Liyuan Zhang

DOI: https://doi.org/10.1007/s11467-020-0952-x

2020-01-01

Frontiers of Physics

Abstract:Recently, the layered transition metal dichalcogenide 1T′-MoTe2 has generated considerable interest due to their superconducting and non-trivial topological properties. Here, we present a systematic study on 1T′-MoTe2 single-crystal and exfoliated thin-flakes by means of electrical transport, scanning tunnelling microscope (STM) measurements and band structure calculations. For a bulk sample, it exhibits large magneto-resistance (MR) and Shubnikov–de Hass oscillations in ρxx and a series of Hall plateaus in ρxy at low temperatures. Meanwhile, the MoTe2 thin films were intensively investigated with thickness dependence. For samples, without encapsulation, an apparent transition from the intrinsic metallic to insulating state is observed by reducing thickness. In such thin films, we also observed a suppression of the MR and weak anti-localization (WAL) effects. We attributed these effects to disorders originated from the extrinsic surface chemical reaction, which is consistent with the density functional theory (DFT) calculations and in-situ STM results. In contrast to samples without encapsulated protection, we discovered an interesting superconducting transition for those samples with hexagonal Boron Nitride (h-BN) film protection. Our results indicate that the metallic or superconducting behavior is its intrinsic state, and the insulating behavior is likely caused by surface oxidation in few layer 1T′-MoTe2 flakes.
MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Bin Ouyang,Shiyun Xiong,Zhi Yang,Yuhang Jing,Yongjie Wang

DOI: https://doi.org/10.48550/arXiv.1703.04155

2017-03-13

Abstract:Due to the distinguished properties offered by different structural phases of monolayer MoS2, phase engineering design are urgently required for achieving switchable structural phase. Strain engineering is widely accepted as a clean and flexible method, however, cannot be achieved in engineering monolayer MoS2 phase transition because the critical biaxial strain required (~15%) is much larger than measured elastic limit (~11%). In this study, employing density functional theoretical calculations, it has been found out that with the forming of heterostructure between MoS2 with buckled 2D materials such as silicence, germanene and stanene, only a small strain can trigger the phase transition. As being suggested by the constructed phase stability diagram, biaxial deformation as low as 3% in MoS2/silicene and MoS2/stanene sandwich structure, would be sufficient to induce the structural phase transition in MoS2 lattice. This strain falls well within experimental elastic limit, thus would be feasible to realize in experiment. The origin of such behavior can be understood as strain induced interlayer covalent bond formation, which finally make MoS2 lattice more sensitive to external strain. This theoretical work provides one realistic route for achieving flexible phase stabilities in experimental design.

Materials Science
Structural and Electronic Phase Transitions Driven by Electric Field in Metastable MoS2 Thin Flakes

C. Shang,B. Lei,W. Z. Zhuo,Q. Zhang,C. S. Zhu,J. H. Cui,X. G. Luo,N. Z. Wang,F. B. Meng,L. K. Ma,C. G. Zeng,T. Wu,Z. Sun,F. Q. Huang,X. H. Chen

DOI: https://doi.org/10.1103/physrevb.100.020508

2019-01-01

Abstract:Transition-metal dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS2 thin flakes driven by electric field. We found that the metastable structure of 1T"'-MoS2 thin flake can be transformed into another metastable structure of 1T'-type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T' phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T'-LiMoS2 to superconducting 1T'-MoS2. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nanodevices with highly tunable characteristics under electric field.
Enhancement of Magnetism by Structural Phase Transition in MoS2

Shiming Yan,Wen Qiao,Xueming He,Xiaobing Guo,Li Xi,Wei Zhong,Youwei Du

DOI: https://doi.org/10.1063/1.4905656

IF: 4

2015-01-01

Applied Physics Letters

Abstract:The magnetic properties of 2H phase of MoS2 (2H-MoS2) and 1T phase of MoS2 (1T-MoS2) were investigated both experimentally and theoretically. Lithium (Li) intercalation method was used to prepare single-layer MoS2 sheets. It was found that pristine MoS2 (2H-MoS2) exhibited weak diamagnetism. After exfoliating by Li intercalation, the crystal structure transformed from 2H to 1T phase, and the magnetism was significantly enhanced from diamagnetism to paramagnetism accordingly. With further annealing in argon atmosphere, the 2H phase recovered gradually from 1T phase, and the magnetism decreased correspondingly. Using crystal field theory and combining the results of first principle calculation, we conclude that the enhanced magnetism can be attributed to the Mo atoms of 1T-MoS2.

Ligand induced structure and property changes of 1T-MoS<sub>2</sub>

Ligand induced structure and property changes of 1T-MoS 2 .

Pressure confinement effect in MoS2 monolayers.

2H → 1T′ phase transformation in Janus monolayer MoSSe and MoSTe: an efficient hole injection contact for 2H-MoS2

In-Plane Anisotropic Properties Of 1t '-Mos2 Layers

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Observation of Gap Opening in 1T' Phase MoS2 Nanocrystals

Structures and phase transition of a MoS2 monolayer

Local Engineering of Topological Phase in Monolayer MoS 2

Local engineering of topological phase in monolayer MoS2

Structure Re-determination and Superconductivity Observation of Bulk 1T MoS2

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

Structural Determination and Nonlinear Optical Properties of New 1T‴-Type MoS2 Compound

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Metastable MoS2: crystal structure, electronic band structure, synthetic approach and intriguing physical properties.

Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

Electronic and Transport Properties of 2H 1−x 1T X MoS 2 Hybrid Structure: A First-Principle Study

Bandgap Opening in MoTe2 Thin Flakes Induced by Surface Oxidation

MoS2 Heterostructure with Tunable Phase Stability: Strain Induced Interlayer Covalent Bond Formation

Structural and Electronic Phase Transitions Driven by Electric Field in Metastable MoS2 Thin Flakes

Enhancement of Magnetism by Structural Phase Transition in MoS2