CuSbS2: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells

Zhifeng Liu,Jiajun Huang,Jianhuan Han,Tiantian Hong,Jing Zhang,Zhihua Liu

DOI: https://doi.org/10.1039/c6cp01688j

IF: 3.3

2016-01-01

Physical Chemistry Chemical Physics

Abstract:A novel promising ternary CuSbS2 absorber material for quantum dot sensitized solar cells.

What problem does this paper attempt to address?

CuSbS2: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells.

Zhifeng Liu,Jiajun Huang,Jianhuan Han,Tiantian Hong,Jing Zhang,Zhihua Liu

DOI: https://doi.org/10.1039/c6cp01688j

IF: 3.3

2016-01-01

Physical Chemistry Chemical Physics

Abstract:A facile, low-cost, simple solution-based process for preparing novel promising chalcostibite CuSbS2 sensitized ZnO nanorod arrays, and the application of these as photoanodes of semiconductor quantum dot sensitized inorganic-organic solar cells (QDSSCs) is reported for the first time. ZnO/CuSbS2 nanofilms were designed and prepared through a simple successive ionic layer adsorption and reaction (SILAR) method and heat treatment process by employing ZnO nanorods as reactive templates. Novel efficient QDSSCs based on the ZnO/CuSbS2 nanofilms plus a solid electrolyte of poly(3-hexylthiophene) (P3HT) were formed, and a power conversion efficiency of 1.61% was achieved. The excellent photoelectric performance is attributed to the improved light absorption efficiency, widened light absorption region, ideal band gap value, and high speed electron injection and transportation. The results demonstrate that a novel ternary sensitizer (I-V-VI2) can be synthesized via a low-costmethod as described here and has great promising potential as a sensitizer in solar cells.
CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Bo Yang,Liang Wang,Jun Han,Ying Zhou,Huaibing Song,Shiyou Chen,Jie Zhong,Lu Lv,Dongmei Niu,Jiang Tang

DOI: https://doi.org/10.1021/cm500516v

IF: 10.508

2014-01-01

Chemistry of Materials

Abstract:Recently, CuSbS2 has been proposed as an alternative earth-abundant absorber material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS2 has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS2 has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (V-Cu) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS2 film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS2 has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and -5.25 eV relative to the vacuum level, respectively. As the calculations predicted, a p-type conductivity is observed in the Hall effect measurements with a hole concentration of similar to 10(18) cm(-3) and hole mobility of 49 cm(2)/(V s). Finally, we have built a prototype FTO/CuSbS2/CdS/ZnO/ZnO:Al/Au solar cell and achieved 0.50% solar conversion efficiency. Our theoretical and experimental investigation confirmed that CuSbS2 is indeed a very promising absorber material for solar cell application.
Jalpaite Ag3CuS2: a novel promising ternary sulfide absorber material for solar cells.

Zhifeng Liu,Jianhua Han,Keying Guo,Xueqi Zhang,Tiantian Hong

DOI: https://doi.org/10.1039/c4cc09111f

IF: 4.9

2015-01-01

Chemical Communications

Abstract:We report a novel promising semiconductor of Ag3CuS2 serving as absorber material in inorganic-organic solid-state solar cells for the first time, and the device (ITO/ZnO/Ag3CuS2/P3HT/Pt) exhibits a power conversion efficiency of 2.01%. This study opens up an available method to develop various ternary absorber materials for tertiary generation solar cells.
Pb5Sb8S17 quantum dot-sensitized solar cells with an efficiency of 6% under 0.05 sun: Theoretical and experimental studies

Sheng-Fong Sie,Nipapon Suriyawong,Jen-Bin Shi,Xin He,Lijun Zhang,David J. Singh,Ming-Way Lee

DOI: https://doi.org/10.1002/pip.2969

2018-01-01

Abstract:Pb5Sb8S17 has recently been demonstrated to be a potential solar absorber material having an efficiency of 4.14% under 0.1 sun. This work reports on the improved performance of solid-state Pb5Sb8S17 quantum dot-sensitized solar cells (QDSCs). Density functional calculations revealed indirect and direct energy gaps of 1.64 and 1.70 eV, respectively, large optical absorption coefficients approximately 10(5)cm(-1) in the visible range, and a large static dielectric function (epsilon(0) = 44) facilitating charge collection. Pb5Sb8S17 nanoparticles were synthesized using the successive ionic layer adsorption and reaction process. Solid-state QDSCs were fabricated from the synthesized nanoparticles with spiro-OMeTAD as the hole-transporting material. The best cell yielded a short-circuit current density J(sc) of 11.88mA/cm(2), an open-circuit voltage V-oc of 0.48V, a fill factor FF of 45.7%, and an efficiency eta of 2.61% under 1 sun. The eta increased to 5.13% at the reduced light of 0.1 sun and further increased to 6.04% at 0.05 sun with J(sc) = 1.33mA/cm(2), V-oc = 0.41V, and FF = 55.7%. The present result represents a 24% improvement over the best previous result. This efficiency of approximately 6% can be categorized as one of the highest-efficiency ternary QDSCs (except the widely studied Cu-In-Se system) and is comparable to the performance of other high-efficiency QDSCs based on single-layered semiconductor absorbers, suggesting that Pb5Sb8S17 could be an efficient absorber material for solar cells.
Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Liang Wang,Bo Ye,Zhe Xia,Meiying Leng,Ying Zhou,Desheng Xue,Jie Zhong,Liang Gao,Haisheng Song,Jiang Tang

DOI: https://doi.org/10.1016/j.solmat.2015.08.016

2016-01-01

Abstract:Cu12Sb4S13 is a very potential non-toxic, earth-abundant absorber material for thin film solar cells yet its photovoltaic related properties are rarely explored so far. In this paper, we first developed a hydrazine solution process to fabricate phase-pure, highly crystalline, large grain Cu12Sb4S13 film and then carried out investigations to study the chemical, optical and electrical properties of Cu12Sb4S13 film in detail. Careful X-ray photoelectron spectroscopy (XPS) measurements indicated Cu12Sb4S13 could be oxidized into Cu3SbS4 in a sulfur rich atmosphere at elevated temperature, and the valance states of our Cu12Sb4S13 are determined as Cu+12Sb3+3Sb5+1S2−13 rather than the previously reported Cu+10Cu22+Sb3+4S2−13. Optical absorption investigation showed that Cu12Sb4S13 has a direct band gap of 1.47 eV. Ultraviolet photoelectron spectroscopy (UPS) study revealed that the conduction band and valence band are located at −3.52 eV and −4.99 eV relative to the vacuum level, respectively. Finally, we built a photodetector based on Cu12Sb4S13 film achieving 0.15 A/W responsivity and a heterojunction solar cell having 0.04% solar conversion efficiency. Our preliminary experimental study indicated that Cu12Sb4S13 may be a very attractive absorber material for photovoltaic application.
CdS/Sb2S3 heterojunction thin film solar cells with a thermally evaporated absorber

Xu Chen,Zhiqiang Li,Hongbing Zhu,Ying Wang,Baolai Liang,Jingwei Chen,Ying Xu,Yaohua Mai

DOI: https://doi.org/10.1039/c7tc02460f

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:An antimony sulfide (Sb2S3) semiconductor is appealing as a promising light absorber due to its suitable bandgap (1.5–1.7 eV), ‘one dimensional’ crystal structure and non-toxic constituents.
CuSbSe2 As a Potential Photovoltaic Absorber Material: Studies from Theory to Experiment

Bo Yang,Ding-Jiang Xue,Zhen-Kun Yuan,Shiyou Chen,Jiang Tang

DOI: https://doi.org/10.1364/acpc.2016.af3i.4

2016-01-01

Abstract:CuSbSe 2 appears to be a promising absorber material for thin-film solar cells due to its attractive optical and electrical properties, as well as earth-abundant, low-cost and low-toxic constituent elements. However, no photovoltaic device has been reported based on this material so far, and little information on physical properties such as defect properties, Raman spectrum and temperature-dependent band gap energy is available. Here we report the first CuSbSe 2 thin film solar cell (FTO/CuSbSe 2 /CdS/ZnO/ITO/Al) through a hydrazine-based solution process, achieving a solar power conversion efficiency (PCE) of 1.32%. Using density functional theory (DFT) calculations, we show that CuSbSe 2 has benign defect properties, i.e., free of recombination-center defects, and flexible defect and carrier concentration which can be tuned through the control of growth condition. Next, deeply systematic material, optical and electrical characterization indicates that CuSbSe 2 is a very promising solar cell absorber. Finally, the obtained 1.32% preliminary efficiency further confirms the great potential of CuSbSe 2 for thin-film solar cell applications.
Recent progress in the research on using CuSbS2 and its derivative CuPbSbS3 as absorbers in case of photovoltaic devices

Muyi Zhang,Chong Wang,Chao Chen,Jiang Tang

DOI: https://doi.org/10.1007/s12200-020-1024-0

2021-01-01

Frontiers of Optoelectronics

Abstract:Thin-film solar cells show considerable application potential as alternative photovoltaic technologies. Cuprous antimony chalcogen materials and their derivatives, represented as CuSbS2 and CuPbSbS3, respectively, exhibit the advantages of low cost, massive elemental abundance, stability, and good photoelectric properties, including a suitable bandgap and large optical absorption coefficient. These advantages demonstrate that they can be used as light absorbers in photovoltaic applications. In this study, we review the major properties, fabrication methods, and recent progress of the performance of the devices containing CuSbS2 and CuPbSbS3. Furthermore, the limitations and future development prospects with respect to the CuSbS2 and CuPbSbS3 solar cells are discussed.
Aqueous Colloidal CuInS2 for Quantum Dot Sensitized Solar Cells

Xing Hu,Quanxin Zhang,Xiaoming Huang,Dongmei Li,Yanhong Luo,Qingbo Meng

DOI: https://doi.org/10.1039/c1jm12629f

2011-01-01

Journal of Materials Chemistry

Abstract:We, for the first time, employed aqueous colloidal CuInS2 in quantum dot sensitized solar cells. With heat treatment and introduction of CdS buffer layer, a power conversion efficiency of 1.47% was achieved. The CuInS2 quantum dot made without using organic solvents offers facile fabrication and potential for further photovoltaic application.
ChemInform Abstract: Jalpaite Ag3CuS2: A Novel Promising Ternary Sulfide Absorber Material for Solar Cells.

Zhifeng Liu,Jianhua Han,Keying Guo,Xueqi Zhang,Tiantian Hong

DOI: https://doi.org/10.1002/chin.201519008

2015-01-01

ChemInform

Abstract:AbstractAg3CuS2 modified ZnO nanoarrays on ITO (indium tin oxide) substrates for inorganic/organic hybrid solar cells are prepared by chemical etching of ZnO nanorods with 0.1 M thioacetamide to form ZnS shell/ZnO core nanotubes.
Inorganic-organic Solar Cells Based on Quaternary Sulfide As Absorber Materials.

Tiantian Hong,Zhifeng Liu,Weiguo Yan,Junqi Liu,Xueqi Zhang

DOI: https://doi.org/10.1039/c5cp05742f

2015-01-01

Abstract:We report a novel promising quaternary sulfide (CuAgInS) to serve as a semiconductor sensitizer material in the photoelectrochemical field. In this study, CuAgInS (CAIS) sulfide sensitized ZnO nanorods were fabricated on ITO substrates through a facile and low-cost hydrothermal chemical method and applied on photoanodes for solar cells for the first time. The component and stoichiometry were key factors in determining the photoelectric performance of CAIS sulfide, which were controlled by modulating their reaction time. ZnO/Cu0.7Ag0.3InS2 nanoarrays exhibit an enhanced optical and photoelectric performance and the power conversion efficiency of ITO/ZnO/Cu0.7Ag0.3InS2/P3HT/Pt solid-state solar cell was up to 1.80%. The remarkable performance stems from improved electron transfer, a higher efficiency of light-harvesting and appropriate band gap alignment at the interface of the ZnO/Cu0.7Ag0.3InS2 NTs. The research indicates that CAIS as an absorbing material has enormous potential in solar cell systems.
CuSe/CuxS As a Composite Counter Electrode Based on P-N Heterojunction for Quantum Dot Sensitized Solar Cells

Yifan Chen,Qingqing Qiu,Dejun Wang,Yanhong Lin,Xiaoxin Zou,Tengfeng Xie

DOI: https://doi.org/10.1016/j.jpowsour.2018.12.027

IF: 9.2

2018-01-01

Journal of Power Sources

Abstract:In this work, we present a new design for the development of quantum dot sensitized solar cells with a CuSe/CuxS substrate on F-doped tin oxide as the counter electrode. The best performing CuSe/Cu0.78S counter electrode notably achieves a photoelectric conversion efficiency of 5.70% with a significant improvement in the J(sc) for the CdS/CdSe co-sensitized solar cells, superior to a cell with CuSe (4.80%) or Cu0.78S (4.11%) as the counter electrodes. Two types of reverse barriers, including a positive reverse barrier and negative reverse barrier, at the interface between the CuxS and CuSe are investigated using solid-state measurements from a dark current t-voltage test. The transient photovoltage responses and Kelvin probe measurements further demonstrate reduction of the positive reverse barrier between the CuSe and CuxS interface with increasing Cu/S ratios of CuxS (x = 0.52-0.78), which is beneficial to the electron transfer from CuxS to CuSe. The electrochemical catalytic activity and stability of the CuSe/CuxS counter electrodes are verified with electrochemical impedance spectroscopy, tafel polarization and cyclic voltammetry results, which suggest that CuSe/CuxS counter electrodes have promising applications in solar cells.
Bournonite CuPbSbS3: an Electronically-3D, Defect-Tolerant, and Solution-Processable Semiconductor for Efficient Solar Cells

Yuhao Liu,Bo Yang,Muyi Zhang,Bing Xia,Chao Chen,Xueping Liu,Jie Zhong,Zewen Xiao,Jiang Tang

DOI: https://doi.org/10.1016/j.nanoen.2020.104574

IF: 17.6

2020-01-01

Nano Energy

Abstract:The absorber layer is a key component of thin-film solar cells. Based-on the recently-proposed electronic dimensionality concept, a promising solar cell absorber material should be electronically high-dimensional, as is the case for all the mainstream absorbers, such as Si, GaAs, Cu(In,Ga)Se-2, CdTe, and CH3NH3PbI3. In this work, we propose an electronically three-dimensional semiconductor, bournonite CuPbSbS3, as a prospective efficient solar cell absorber material. Our density functional theory calculations indicate that CuPbSbS3 exhibits desired optoelectronic properties, such as a nearly direct bandgap, high optical absorption coefficients, appropriate p-type doping, and defect tolerance. Experimentally, we developed a butyldithiocarbamate acid (BDCA) solution process for depositing high-quality CuPbSbS3 thin films and built the first CuPbSbS3 thin film solar cells. Our CuPbSbS3-based solar cells achieved a preliminary power conversion efficiency of 2.23% (open circuit voltage of 699 mV), highlighting the potential of this semiconductor for thin film photovoltaics.
CuSx Hole Transport Layer for PbS Quantum Dot Solar Cell

Jinhuan Li,Yinglin Wang,Shuaipu Zang,Daocheng Pan,Xintong Zhang,Yichun Liu

DOI: https://doi.org/10.1016/j.solener.2020.08.087

IF: 7.188

2020-01-01

Solar Energy

Abstract:Lead sulfide (PbS) colloidal quantum dot solar cells (CQDSCs) are emerging photovoltaic technology due to their outstanding light-harvesting ability in the visible and near-infrared spectral region, long-term air stability, multiple exciton generation and solution processability. However, PbS CQDSCs have been limited by the unsatisfactory carrier collection in the CQD films. Band alignment engineering using p-type hole transport layer (HTL) was proved to efficiently promote the carrier collection in cells with both planar and ordered bulky heterojunctional (OBH) structures. Nevertheless, seeking for proper p-type materials suitable for the PbS CQDSCs is still an open question. Herein, we reported a new p-type metal-organic material, CuSx, could act as HTL of PbS CQDSCs with OBH structure. The CuS x possesses a Fermi level E-F (-5.02 eV), shallower valence band energy (-5.48 eV) and conduction band energy (-3.19 eV), inducing a proper band alignment at the PbS light-harvesting layer/CuSx interface. This not only enhanced hole extraction proved by the increase of short-circuit current density (J(sc)) from 19.12 to 22.33 mA/cm(2), but also blocked back electron demonstrated by the extended carrier lifetime. Consequently, cells with CuSx HTL generated a power conversion efficiency of 5.2%, leading to a PCE increase of 13% compared with that of reference HTL-free cell (4.6%). Our work introduced a promoting CuSx hole extraction material which shows great potential application in quantum-dot-based devices suffering from the insufficient carrier collection.
Solution-processed CuSbS 2 Solar Cells Based on Metal–organic Molecular Solution Precursors

Yafeng Xu,Qing Ye,Wenyong Chen,Xu Pan,Linhua Hu,Shangfeng Yang,Tasawar Hayat,Ahmed Alsaedi,Jun Zhu,Songyuan Dai

DOI: https://doi.org/10.1007/s10853-017-1663-8

IF: 4.5

2017-01-01

Journal of Materials Science

Abstract:Developing earth-abundant and low-toxic light absorber materials is crucial for next-generation photovoltaics. In this article, a simple solution-process method for the deposition of CuSbS2 thin film is presented. An equimolar mixture of Cu2O and Sb2O3 was dissolved in butyldithiocarbamic acid, forming a thermally degradable metal–organic molecular solution. Uniform and phase-pure CuSbS2 thin films can be obtained by spin coating this precursor solution followed by a fast annealing process in an inert gas environment. Preferential crystal growth of (111) lattice planes was observed in films prepared at annealing temperature of more than 290 °C. The films possess a direct band gap of 1.6 eV with high absorption coefficient. CuSbS2 planar heterojunction solar cells of FTO/CdS/CuSbS2/Au structure were assembled achieving a power conversion efficiency of 0.68% under one sun illumination. This metal–organic molecular solution precursor provides a simple method to fabricate multicomponent inorganic chalcogenide films for photovoltaic application.
CuSbS 2 Solar Cells Using CdS, in 2 S 3 and the In/Cd-based Hybrid Buffers

University of New South Wales,Zhao Xiangyun,Yang Zhen,Ng Boon K.,Jiang Liangxing,Lai Yanqing,Hunan City University

DOI: https://doi.org/10.1007/s11664-021-08815-w

IF: 2.1

2021-01-01

Journal of Electronic Materials

Abstract:CuSbS 2 , a ternary I–V–VI 2 chalcogenide material, has recently drawn great attention for use as a promising light absorber for photovoltaics. However, the low open circuit voltage ( V OC ) remains as a bottleneck for CuSbS 2 solar cells which is the limitation of its power conversion efficiency. This could be caused by the severe recombination losses at the interface between CuSbS 2 and CdS buffer layers. This work aims to explore the effect of CdS, In 2 S 3 , and the In/Cd-based hybrid buffer layers on the device performance of CuSbS 2 solar cells. Device parameters, such as current density-voltage ( J–V ) and spectral response, were measured and compared, band alignment was extrapolated for CuSbS 2 with different buffer materials. With the highest measured V OC and short circuit current density ( J sc ), reduced series resistance ( R s ) and improved shunt resistances leading to the highest fill factor (FF), it has been concluded that the CuSbS 2 device with combined CdS/In 2 S 3 buffer layers exhibits the best performance compared to those with other buffer layers.
A review of semiconductor materials as sensitizers for quantum dot-sensitized solar cells

M. Kouhnavard,S. Ikeda,N.A. Ludin,N.B. Ahmad Khairudin,B.V. Ghaffari,M.A. Mat-Teridi,M.A. Ibrahim,S. Sepeai,K. Sopian

DOI: https://doi.org/10.1016/j.rser.2014.05.023

IF: 16.799

2014-09-01

Renewable and Sustainable Energy Reviews

Abstract:Quantum dot-sensitized solar cells (QDSSCs) are renowned energy devices known for their distinct qualities, including (i) the ability to harvest sunlight that generates multiple electron–hole pairs, (ii) simplicity in fabrication, and (iii) low cost. The power conversion efficiency (η) rates of many QDSSCs are lower than those of dye-sensitized solar cells, reaching a maximum of 12% as a result of narrow absorption ranges and of the charge recombination occurring at the QD– and TiO2–electrolyte interfaces. New types of sensitizers are necessary to be developed to further increase the η of QDSSCs. Semiconductor QDs are the most applicable material for photosensitization because of their high absorption and the obtained emission spectra that can be manipulated by varying dot sizes.This paper presents an overview of recent studies on QDSSC photosensitization and provides suggestions to improve QDSSCs by explicitly comparing different sensitizers. Particular focus is directed on the behavior of several important types of semiconductor nanomaterials (sensitizers such as CdS, Ag2S, CdSe, CdTe, CdHgTe, InAs, and PbS) and other nanomaterials that are TiO2, ZnO, and carbon-based species. These materials are developed to enhance the electron transfer efficiency of QDSSCs. Understanding the mechanism of various photosensitization processes can provide design guidelines for future successful applications.

energy & fuels,green & sustainable science & technology
Electronic structure, defect properties, and optimization of band gap of the earth-abundant and low-toxicity photovoltaic absorber Cu3SbS4

Dan Huang,Changqing Lin,Yang Xue,Shiyou Chen,Yu-Jun Zhao,Clas Persson,Huang Dan,Yujun Zhao

DOI: https://doi.org/10.1039/d2cp01941h

IF: 3.3

2022-09-25

Physical Chemistry Chemical Physics

Abstract:Searching for an earth-abundant and environment-friendly absorber for thin-film solar cells that provide similar power conversion efficiency as CdTe and Cu(In,Ga)Se2 is of great importance for large-scale applications. Success would change the world's solar energy supply to an even more sustainable material resource. In this paper, we have studied by first-principles calculations the electronic structure and defect property of the promising absorber Cu3SbS4. Its electronic properties, like direct band gap, high absorption coefficient, and light carrier effective masses, satisfy the requirements for an absorber except for somewhat too small band gap energy. Sulfur and copper vacancies are easily formed defects in Cu3SbS4, where S vacancy shrinks the band gap and degrades the material. This probably explains the experimental findings of a rather poor device performance. The suitable preparation of Cu3SbS4 as an absorber is anticipated to be Cu-poor, Sb-moderate, and S-rich condition. Herein, isovalent element alloying is demonstrated to be an effective way to increase the gap energy and thereby improve the material properties.

chemistry, physical,physics, atomic, molecular & chemical
In-situ Preparation of ZnO/Cu2−xS on AZO Conductive Substrate and Applied As Counter Electrode for Quantum Dot Sensitized Solar Cells

Yifan Chen,Yinyin Li,Chunxia Wu,Dejun Wang,Yanhong Lin,Xintong Zhang,Xiaoxin Zou,Tengfeng Xie

DOI: https://doi.org/10.1016/j.solener.2020.06.080

IF: 7.188

2020-01-01

Solar Energy

Abstract:In this work, the ZnO/Cu2-xS composite material is prepared based on Al doped zinc oxide glass substrate and applied as counter electrode (CE) in quantum dot sensitized solar cell. The ZnO/Cu2-xS CEs with the different Cu/S ratios of Cu2-xS (2-x = 1.73-1.48) can be controlled by immersing Cu/ZnO in different concentrations of S2- solution. As a result, the solar cell fabricated by Cu-1.62 S/ZnO CE exhibits the best photoelectric conversion efficiency of 5.35% under 1 sun illumination, which is higher than that of Cu1.62S CE (4.22%). On the basis of the result of solid-state current density-voltage test and transient photo-voltage measurements, the formation of p-n heterojunction and the improving electrocatalytic activity in composite CEs accounts for the enhanced photoelectric conversion efficiency. These results are coincide with the outcomes of the impedance analysis, Tafel polarization measurement and cyclic voltammetry test for the symmetrical cell. Consequentially, the ZnO/Cu2-xS composite counter electrode is a promising material and the applications in solar cells.

CuSbS<sub>2</sub>: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells

CuSbS2: a promising semiconductor photo-absorber material for quantum dot sensitized solar cells.

CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Jalpaite Ag3CuS2: a novel promising ternary sulfide absorber material for solar cells.

Pb5Sb8S17 quantum dot-sensitized solar cells with an efficiency of 6% under 0.05 sun: Theoretical and experimental studies

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

CdS/Sb<sub>2</sub>S<sub>3</sub> heterojunction thin film solar cells with a thermally evaporated absorber

CuSbSe2 As a Potential Photovoltaic Absorber Material: Studies from Theory to Experiment

Recent progress in the research on using CuSbS<sub>2</sub> and its derivative CuPbSbS<sub>3</sub> as absorbers in case of photovoltaic devices

Aqueous Colloidal CuInS2 for Quantum Dot Sensitized Solar Cells

ChemInform Abstract: Jalpaite Ag3CuS2: A Novel Promising Ternary Sulfide Absorber Material for Solar Cells.

Inorganic-organic Solar Cells Based on Quaternary Sulfide As Absorber Materials.

CuSe/CuxS As a Composite Counter Electrode Based on P-N Heterojunction for Quantum Dot Sensitized Solar Cells

Bournonite CuPbSbS3: an Electronically-3D, Defect-Tolerant, and Solution-Processable Semiconductor for Efficient Solar Cells

CuSx Hole Transport Layer for PbS Quantum Dot Solar Cell

Solution-processed CuSbS 2 Solar Cells Based on Metal–organic Molecular Solution Precursors

CuSbS 2 Solar Cells Using CdS, in 2 S 3 and the In/Cd-based Hybrid Buffers

A review of semiconductor materials as sensitizers for quantum dot-sensitized solar cells

Electronic structure, defect properties, and optimization of band gap of the earth-abundant and low-toxicity photovoltaic absorber Cu3SbS4

In-situ Preparation of ZnO/Cu2−xS on AZO Conductive Substrate and Applied As Counter Electrode for Quantum Dot Sensitized Solar Cells