Bournonite CuPbSbS3: an Electronically-3D, Defect-Tolerant, and Solution-Processable Semiconductor for Efficient Solar Cells

Yuhao Liu,Bo Yang,Muyi Zhang,Bing Xia,Chao Chen,Xueping Liu,Jie Zhong,Zewen Xiao,Jiang Tang

DOI: https://doi.org/10.1016/j.nanoen.2020.104574

IF: 17.6

2020-01-01

Nano Energy

Abstract:The absorber layer is a key component of thin-film solar cells. Based-on the recently-proposed electronic dimensionality concept, a promising solar cell absorber material should be electronically high-dimensional, as is the case for all the mainstream absorbers, such as Si, GaAs, Cu(In,Ga)Se-2, CdTe, and CH3NH3PbI3. In this work, we propose an electronically three-dimensional semiconductor, bournonite CuPbSbS3, as a prospective efficient solar cell absorber material. Our density functional theory calculations indicate that CuPbSbS3 exhibits desired optoelectronic properties, such as a nearly direct bandgap, high optical absorption coefficients, appropriate p-type doping, and defect tolerance. Experimentally, we developed a butyldithiocarbamate acid (BDCA) solution process for depositing high-quality CuPbSbS3 thin films and built the first CuPbSbS3 thin film solar cells. Our CuPbSbS3-based solar cells achieved a preliminary power conversion efficiency of 2.23% (open circuit voltage of 699 mV), highlighting the potential of this semiconductor for thin film photovoltaics.