Single-crystal Growth of HgI_2 and Its Characterizations

Tao Wang
2008-01-01
Abstract:α-HgI2 single crystal was grown by vapor sublimation method within a vertical transparent two-zones growth furnace.In the primary growth stage,HgI2 shows a faceted growth interface,which finally changes into the spherical one due to the high thermal resistance of HgI2.XRD,UV-VIS-IR spectrum and I-V analysis were used to characterize the properties of the as-grown crystal.The results of XRD show that the as-grown crystal is a single α-HgI2 phase with the growth direction of .The UV-VIS-IR spectrum indicates that the energy gap of α-HgI2 is about 2.12 eV,corresponding to the wavelength of 580 nm.Near-infrared transmittance of HgI2 is about 45%.Two absorption peaks were observed at the wavelength of 2307.5 nm and 1731.4 nm due to the absorption of the cavity and trap levels.The electrical resistivity of the wafers was determined by I-V characteristic to be about 1011 Ω·cm.
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