Study of the Silicon Carbide Integrate Circuits Technique

Jian Wang

2000-01-01

Abstract:The technique about the heteroepitaxial growth of wide bandgap material Carbon Silicon (SiC) thin films and SiC integrate circuits are discussed. Different techniques are compared in their power supply.

What problem does this paper attempt to address?

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

王玉霞,何海平,汤洪高

DOI: https://doi.org/10.3321/j.issn:0454-5648.2002.03.021

2002-01-01

Abstract:Due to its excellent physical and chemical properties, SiC has been regarded as a key material for the third_generation semiconductors with extensive potential applications. In this paper, SiC properties, techniques for SiC bulk and film growth, current status of research on SiC_based device, and applications and prospect of SiC materials are reviewed. The aothors' results of growing single_crystalline 4H-SiC film on Si substrate by pulsed laser deposition are also described.
Technical approaches towards ultra-high power density SiC inverter in electric vehicle applications

Xuhui Wen,Tao Fan,Puqi Ning,Qing Guo

DOI: https://doi.org/10.23919/TEMS.2017.8086101

2017-01-01

CES Transactions on Electrical Machines and Systems

Abstract:Along with the rapid growth in electric vehicle (EV) market, higher power density and more efficient motor drive inverters are required. It is well known that silicon carbide (SiC) has advantages of high temperature, high efficiency and high switching frequency. It is believed that the appropriate utilization of these merits can pave the way to ultra-high power density inverters. This paper presen...
Characterizations on the Doping of Single-Crystal Silicon Carbide

Huifan Xiong,Weiwei Mao,Rong Wang,Shuai Liu,Naifu Zhang,Lihui Song,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1016/j.mtphys.2022.100906

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving intense attention. Up to date, SiC has been investigated for applications in high-power and high-frequency electronics, ultraviolet optoelectronics and quantum computing, which all critically have a strict requirement on the doping of SiC. To improve the quality and reliability of SiC devices, the amounts of both intentionally and unintentionally doped impurities as well as the doping-dependent characteristics like resistivity must be characterized with accuracy and convenience. This article reviews these characterization methods, including elemental analysis, electrical and optical methods. Among those, the term “elemental analysis” dominantly introduces the secondary ion mass spectroscopy technique (SIMS). Meanwhile, for the electrical methods, we will discuss the mature techniques used in laboratory including the Hall effect method, the electrical scanning probe techniques, etc. Moreover, the optical methods introduce the optical absorption method, Raman spectra analysis and photoluminescence spectroscopy. Additionally, a focus is placed specifically on the characterization of the carrier concentration distribution in SiC wafer, which meets the practical requirement for in situ diagnostics of SiC wafers.
One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Shanliang Chen,Weijun Li,Xiaoxiao Li,Weiyou Yang

DOI: https://doi.org/10.1016/j.pmatsci.2019.04.004

2019-01-01

Abstract:Silicon carbide (SiC) is recognized as one of the shining stars of third generation semiconductors, because of its preeminent characteristics, for instance, outstanding mechanical behavior, exceptional chemical inertness, high thermal stability, and high thermal conductivity, which represent its unique advantage and importance to be serviced under high-power/high-temperature/high-voltage harsh environments. In this review, we firstly present a comprehensive overview on the designed growth of one-dimensional (1D) SiC nanostructures in fruitful morphologies with tailored doping, followed by a detailed discussion to highlight a range of intriguing properties. Subsequently, the state-of-the-art research activities regarding their extensive applications are systematically summarized, including field emitters, supercapacitors, field-effect transistors, photocatalysts, pressure sensors, microwave absorption, superhydrophobic coating, and so forth. Finally, the future prospects and research directions of 1D SiC nanostructures are proposed.
Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Fei Wang,Zheyu Zhang

DOI: https://doi.org/10.24295/CPSSTPEA.2016.00003

2016-12-31

Abstract:This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed

Materials Science,Engineering,Physics
Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Yi Lin Liu

DOI: https://doi.org/10.4028/p-4x61u9

2022-05-31

Solid State Phenomena

Abstract:Publication date: 30 May 2022 Source: Solid State Phenomena Vol. 332 Author(s): Yi Lin Liu The review article describes the recent progress on SiC single-crystal and epitaxial growth technology. SiC is a third-generation semiconducting material with wide bandgap and high electrical breakdown field. Thanks to its excellent properties, it becomes an advantageous material in the field of high-temperature and high-power electronic device applications. Power devices fabricated of SiC are able to be operated at higher power density and higher switching frequency. This review focus on the growth, doping control and defect control of SiC single-crystal ingot and epilayer. The process of PVT, CVD, defect control, doping control and some recent applications of SiC are described. Various types of defects are described, including Micropipes, Dislocations, Stacking Faults etc. The wafering and polishing technology are also described.
Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Fang Nan,Liu Feng,Liu Xiaorui,Liao Ruixian,Miao Ling,Jiang Jianjun

DOI: https://doi.org/10.6023/a12070398

2012-01-01

Acta Chimica Sinica

Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.
SiC devices parameters effects on the electrical behaviour of mCascode switch

cristian boianceanu,gheorghe brezeanu,f udrea,g a j amaratunga,maria brezeanu,andrei mihaila,florin draghici,i enache,a visoreanu

DOI: https://doi.org/10.1109/SMICND.2004.1403026

2004-01-01

Abstract:This work is concerned with the behaviour of a hybrid Si/SiC high voltage switch in multiple cascode configuration. The influences of the threshold voltage and of β current factor of the SiC medium power J-FET on the performance of the switch are evinced.
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Fan Li,Fabrizio Roccaforte,Giuseppe Greco,Patrick Fiorenza,Francesco La Via,Amador Pérez-Tomas,Jonathan Edward Evans,Craig Arthur Fisher,Finn Alec Monaghan,Philip Andrew Mawby,Mike Jennings

DOI: https://doi.org/10.3390/ma14195831

2021-10-05

Abstract:Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.
Recent progress of SiC power devices and applications

Lijuan Li,Canbing Li,Yijia Cao,Feng Wang

DOI: https://doi.org/10.1002/tee.21888

IF: 0.923

2013-07-31

IEEJ Transactions on Electrical and Electronic Engineering

Abstract:Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advantages and potential for energy savings and emission reduction in the coming years. In this paper, the research on SiC material and device technologies, the benefits, and some remaining issues are discussed. Recent progress (since 2007) in applications such as DC–DC, AC–DC, DC–AC, and AC–AC converters is discussed. Also, future applications and perspectives are analyzed. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

engineering, electrical & electronic
Status of Silicon Carbide Micromachining, Circuits and Sensing Devices

Wei Tang,Haixia Zhang

DOI: https://doi.org/10.2174/1874464811104030191

2011-01-01

Recent Patents on Materials Sciencee

Abstract:Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-frequency applications, due to its outstanding electrical, mechanical properties, and chemical inertness. SiC semiconductor technology has been developed widely since the commercialization of 6H-SiC and 4H-SiC bulk SiC wafers in 1990s. This paper reviews the recent patents on SiC semiconductor technology, introduces the achievements both in academy and industry for micromachining technologies, circuits devices. All these developments are driving high-performance SiC devices into harsh environment applications. Keywords: Harsh environment, micromachining, SiC, SiC circuit, SiC MEMS, SiC Wafer, SiC Thin Film, Doping, Oxidation, Ohmic Contacts
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Joost Romijn,Sten Vollebregt,Luke M. Middelburg,Brahim El Mansouri,Henk W. van Zeijl,Alexander May,Tobias Erlbacher,Guoqi Zhang,Pasqualina M. Sarro

DOI: https://doi.org/10.1109/ted.2021.3125279

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

engineering, electrical & electronic,physics, applied
SiC based Technology for High Power Electronics and Packaging Applications

Ashutosh Sharma,Soon Jae Lee,Young Joo Jang,Jae Pil Jung

DOI: https://doi.org/10.6117/kmeps.2014.21.2.071

2014-06-30

Journal of the Microelectronics and Packaging Society

Abstract:Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.
Advances in SiC materials and devices: an industrial point of view

R.R Siergiej,R.C Clarke,S Sriram,A.K Agarwal,R.J Bojko,A.W Morse,V Balakrishna,M.F MacMillan,A.A Burk,C.D Brandt,A.A Burk, Jr

DOI: https://doi.org/10.1016/s0921-5107(98)00438-3

1999-07-01

Abstract:Silicon Carbide (SiC) is an emerging semiconductor that has proven itself especially well-suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance. In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed (1) semi-insulating for MESFETs, and (2) highly conducting boules for SITs and power switches. Very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3–5 μm h−1 exhibiting unintentional n-type doping of ∼1×1015 cm−3, and room temperature Hall mobilities of ∼1000 cm2 V−1 s−1. Controlled n-type doping between ∼5×1015 cm−3 and >1×1019 cm−3 has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS Turn-Off Thyristors (MTO™) are being investigated as power switches because they offer ease of turn-off, 500°C operation and reduced cooling requirements. In the fabrication of high-power, high-frequency transistors at UHF, L-, S-, and X-bands SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistor packages have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-Band.
Silicon Carbide: Material Growth, Device Processing, and Applications

Marilena Vivona,Mike Jennings

DOI: https://doi.org/10.3390/ma17184571

IF: 3.4

2024-09-19

Materials

Abstract:The continuous demand for electronic devices operating at increasing current and power levels, as well as at high temperatures and in harsh environments, has driven research into wide-band gap (WBG) semiconductors over the last three decades [...]

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Comparative Study on Power Module Architectures for Modularity and Scalability

Mei-Chien Lu

DOI: https://doi.org/10.1115/ipack2019-6443

2019-10-07

Abstract:Abstract Silicon carbide wide bandgap power electronics have gained application spaces in hybrid electric vehicle and electrical vehicles. The Department of Energy has set target performance goals for 2025 to promote electric vehicles and hybrid electric vehicles as a means of carbon emission reduction and long term sustainability. Silicon carbide technology is well suited to reach these goals. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and silicon carbide technologies. Power modules of commercial traction inverters are analyzed for their within-package interconnect scheme, module architecture, and cooling methods. A few power module package architectures from both industry adopted standards and proposed patented technologies are compared for modularity and scalability for integration into inverters. The within package interconnect schemes are crucial elements to support power module design. Current trends of power module architectures and their integration into inverter are discussed. The development of an eco-system to support the transition from silicon-based to silicon carbide-based power electronics is additionally discussed as an ongoing challenge.
Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

Yupu Wang,Dandan Wang,Ruolan Wang,Mingsheng Fang,Deyuan Wei,Kaixuan Li,Li Song,Yan Liu,Ting Zhang,Anli Yang,Qichao Ding,Zhihong Mai

DOI: https://doi.org/10.1109/sslchinaifws60785.2023.10399729

2023-01-01

Abstract:SiC materials and devices are highly regarded in the power semiconductor industry for their exceptional electrical, thermal, and chemical properties. They meet the demanding requirements of high temperature, voltage, frequency, power, and radiation resistance applications. With the increasing demand for new energy vehicles, 5G communications, rail transit, and ultra-high voltage transmission, SiC power devices are rapidly expanding. However, the quality of SiC wafers still needs improvement compared to well-established Si-based semiconductor technology. The maturity of SiC wafer manufacturing directly impacts device performance. This comprehensive review focuses on the thorough characterization and analysis of SiC wafers. It includes quantitative and qualitative assessments of material composition, trace elements, microscopic and lattice structures, binding energy, chemical bonds, and electrical properties. SiC wafers and epitaxial layers have defect densities several orders of magnitude higher than Si wafers, significantly affecting the electrical performance and reliability of semiconductor devices. The study analyzes surface defects in SiC wafers and calculates yield using a Poisson Model based on defect density, providing insights for SiC manufacturing cost analysis. Additionally, the review conducts a series of systematic failure investigations on a SiC power trench MOSFET through failure mode analysis. Thermally-induced voltage variation technology identifies the failure location. Electrical performance simulation analysis utilizes physical parameters extracted from a matured SiC MOSFET product chip. This report offers a comprehensive overview of SiC material and device characterization, analysis, and failure investigation for power electronics engineering. The findings enhance the understanding of SiC technology and its potential for further advancements in the power semiconductor industry.
A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

Lubin Han,Lin Liang,Yong Kang,Yufeng Qiu

DOI: https://doi.org/10.1109/tpel.2020.3005940

IF: 5.967

2021-02-01

IEEE Transactions on Power Electronics

Abstract:Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of development of SiC IGBT in the past 30 years. The progresses of models, structure design, and performance in SiC IGBT are summarized. The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail. The experimental results and existing problems in SiC IGBT-based applications are summarized in the end.

engineering, electrical & electronic
Integration of graphene and MoS 2 on silicon carbide: Materials science challenges and novel devices

Filippo Giannazzo,Salvatore Ethan Panasci,Emanuela Schilirò,Antal Koos,Béla Pécz

DOI: https://doi.org/10.1016/j.mssp.2024.108220

IF: 4.1

2024-02-13

Materials Science in Semiconductor Processing

Abstract:Although silicon carbide (SiC) is widely regarded as the material of choice for power electronics, the development of several new applications on the SiC material platform is currently explored. The integration of two dimensional (2D) materials, such as graphene and molybdenum disulfide (MoS 2 ) provides silicon carbide (SiC) with additional functionalities, allowing to expand its range of applications. This article reviews the state-of-the art methods for scalable growth of graphene and MoS 2 on SiC, specifically on the hexagonal polytypes. Some open research directions in materials integration have been also discussed, like the use of epitaxial graphene (Epi-Gr) as interlayer for van der Waals (vdW) epitaxy of GaN or Ga 2 O 3 on SiC substrates, and the growth of 2D forms of GaN materials by confined epitaxy at Epi-Gr/SiC interface. Finally, an overview of recently proposed electronics/optoelectronics applications of these material systems, specifically for high frequency electronics, quantum metrology, THz and UV detectors, is provided. This work can be a useful guide for silicon carbide community on these open research directions.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

Study of the Silicon Carbide Integrate Circuits Technique

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Technical approaches towards ultra-high power density SiC inverter in electric vehicle applications

Characterizations on the Doping of Single-Crystal Silicon Carbide

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

SiC devices parameters effects on the electrical behaviour of mCascode switch

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Recent progress of SiC power devices and applications

Status of Silicon Carbide Micromachining, Circuits and Sensing Devices

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

SiC based Technology for High Power Electronics and Packaging Applications

Advances in SiC materials and devices: an industrial point of view

Silicon Carbide: Material Growth, Device Processing, and Applications

Comparative Study on Power Module Architectures for Modularity and Scalability

Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

Integration of graphene and MoS 2 on silicon carbide: Materials science challenges and novel devices