Abstract:It is demonstrated that cuprous oxide (Cu2O) can be electrodeposited epitaxially onto silicon (Si) and indium phosphide (InP) (001) single‐crystalline substrates from aqueous solution. Epitaxial electrodeposition under these conditions is remarkable considering the strong driving force for the formation of amorphous native oxide layers on Si and InP substrates. To elucidate the growth mechanisms, the microstructure of the interfaces between the Cu2O layer and the two different substrates was investigated by TEM (transmission electron microscopy) in conjunction with XEDS (X‐ray energy‐dispersive spectroscopy) and EELS (electron energy‐loss spectroscopy). In both heteroepitaxial systems, the Cu2O layers have a unique but non‐trivial crystallographic orientation relationship (OR) with the substrate, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. We show that this relationship minimizes the overall misfit between corresponding interatomic spacings of the two adjacent crystals. In apparent contradiction to the unique OR, TEM revealed that in both hetero‐systems the Cu2O layer is separated from the substrate by an amorphous interlayer. The thickness of the interlayer typically is a few nanometers. The presence of an amorphous interlayer contrasts with our experimental results on electrodeposited Cu2O on Au (001) single‐crystal substrates, also included in this article, where TEM shows the Cu2O epilayer in direct contact with the substrate. XEDS and EELS analysis of the chemical composition and bonding at Cu2O/Si and Cu2O/InP interfaces in the as‐grown state as well as after tempering revealed that the interlayer is mainly composed of SiO2 and InPO4, respectively. Most likely, the observed epitaxial layers on top of an amorphous interlayer evolve by nucleation of epitaxial Cu2O directly on the substrate. While simultaneous oxidation of the substrate leads to the formation of an amorphous layer, the epitaxial nuclei can laterally overgrow the oxide. Consequently, the local composition of the amorphous layer varies with the nature of the substrate.

Epitaxial Electrodeposition of High-Aspect-Ratio Cu2O(110) Nanostructures on InP(111)

Epitaxial Electrodeposition of Cu2o Films Onto Inp(001)

Shape Control in Epitaxial Electrodeposition: Cu2O Nanocubes on InP(001)

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Epitaxial Electrodeposition of Zinc Oxide Nanopillars on Single-Crystal Gold

Cuprite Nanowires by Electrodeposition from Lyotropic Reverse Hexagonal Liquid Crystalline Phase

Tuning the Structures of Two-Dimensional Cuprous Oxide Confined on Au(111)

High-index Cu2O (113) Film on Faceted MgO (110) by Molecular Beam Epitaxy

Electrodeposition of AgCuO2 Nanoplates

Electrodeposition and Optical Properties of Highly Oriented Γ-Cui Thin Films

X-ray diffraction study of epitaxial CuO nanostructures obtained through post-deposition annealing of Cu on SrTiO$_3$(001)

Controllable Fabrication and Electrical Performance of Single Crystalline Cu2O Nanowires with High Aspect Ratios

Electrodeposition of high aspect ratio LaPO 4 and LaPO 4 :Ln 3+ (Ln 3 + =Ce 3+ , Tb 3+ ) nanostructures

Interface-controlled Two-Dimensional Cuprous Oxide Structures

Growth of In2O3 Nanowires Catalyzed by Cu Via a Solid–Liquid–Solid Mechanism

In Situ Synthesis and Characterization of Cu2O Nanowire Networks from CuSCN Films

Molecular Beam Epitaxy Growth and Surface Structure of Sr1−xNdxCuO2 Cuprate Films

In-Depth Study of Chemically Electrodeposited Cuprous Oxide (Cu2O) thin Films on ITO Glass

(Digital Presentation) On Epitaxial Electrodeposition of Co, Ru and Cu for Interconnect Applications