In Situ Synthesis and Characterization of Cu2O Nanowire Networks from CuSCN Films

Xingxing Xiao,Peng Xia,Xin Ji,Wei Xu

DOI: https://doi.org/10.1016/j.matlet.2014.04.151

IF: 3

2014-01-01

Materials Letters

Abstract:Cuprous oxide (Cu2O) nanowire films were in situ grown from pre-deposited cuprous thiocyanate (CuSCN) films which acted as sacrificial precursors. The synthesis was processed in air from NaOH solution, providing an appealing alternative to nanowire-based porous films. Plausible solid–liquid interface reactions were described. Structural analysis showed that Cu2O nanowires were p-type polycrystalline semiconductor, with high aspect ratio of 10–30 nm in diameter and more than 1 um in length, and they were found to be interlaced with each other in the formation of interpenetrating networks within the Cu2O film which possessed large-area uniformity. It is noteworthy that the nanowire-based films actually are porous films embedded with various interwire spaces and cavities. Photoelectrochemical measurements revealed that a Cu2O film with thickness of 500–1000 nm generated zero-bias photocurrent of approximately 1.5 μA cm−2. The present synthesis is facile and low-cost, and is expected to be suitable for mass production of large-area semiconductor films under ambient condition.