Abstract:Manipulating and reserving the valley pseudospin of excitons is one core aim in the two-dimensional transition metal dichalcogenides (TMDs). However, due to the strong electron-hole exchange and spin-orbit coupling interactions, the exciton recombination lifetime is subject to picosecond timescale intrinsically, and the valley polarization is hardly modulated by a moderate magnetic field. It is fortunate that interlayer and defect-localized excitons promise to overcome these difficulties by suppressing the above interactions. Here we clearly reveal that the valley polarization can be reversed and revived in the defect-localized excitons with a microsecond lifetime in AB-stacked WSe2-WS2 heterobilayer. Specifically, for the interlayer defect-localized exciton, the valley polarization is reversed and can be efficiently enhanced by a weak out-of-plane magnetic field (<0.4 T). In sharp contrast, the valley polarization of the intralayer defect-localized exciton can revive after a fast decay process and follows the direction of the moderate out-of-plane magnetic field (<3 T). We explain the reversed valley polarization with highly magnetic sensitivity by the delocalization of defect-localized holes under a weak magnetic field and the revival of valley polarization by the valley Zeeman effect under a moderate magnetic field. Our results demonstrate that the valley pseudospin of defect-localized excitons can be efficiently modulated by the external magnetic field and enrich both the understanding and the technical approaches on manipulating the valley dynamics in TMDs and their heterostructure.

Manipulation of Valley-Pseudospin in 2D WTe2/CrI3 Van Der Waals Heterostructure by Magnetic Proximity Effect

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Tunable Valley Polarization in Janus WSSe by Magnetic Proximity Coupling to a CrI3 Layer

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Optical control of the valley Zeeman effect through many-exciton interactions

Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe2 monolayers

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Effect of strain engineering on magnetism-induced valley splitting in WSe 2 based on the WSe 2 /CrSe 2 heterojunction

Prediction of large spin-valley polarization in the Janus 2H–WSSe monolayer on VN magnetic substrate

Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures